search.noResults

search.searching

note.createNoteMessage

search.noResults

search.searching

orderForm.title

orderForm.productCode
orderForm.description
orderForm.quantity
orderForm.itemPrice
orderForm.price
orderForm.totalPrice
orderForm.deliveryDetails.billingAddress
orderForm.deliveryDetails.deliveryAddress
orderForm.noItems
294 Andreas Stoffers et al. The HAADF STEM image can already provide highly


interesting structural details without further extensive simulations. The present Σ3 tilt GB shows nearly perfect structure of a coherent and symmetric twin boundary. The term “coherent” in this context refers to the fact that one atomic layer belongs consistently to both adjacent grains. The Si dumbbells are rotated by 70° and the GB plane is (111) with respect to both crystals. Following the trace of the GB, no change in this nearly perfect symmetry was observed. The atomic structure observed along the Σ9 GB is much


more complex. Its structural motifs are repeated periodically, with a length of its underlying structural units of 1.5 nm, over a distance of >20 nm. A single structural unit is highlighted by the yellow frame. The complex atomic structure makes it difficult to assign a distinct GB plane direction, but in agreement with the expectations from trace analysis performed on the EBSD measurements (not shown here), the GB plane is close to (114). The misorientation of both crystals measured in the HAADF micrograph is 36±1°, whereas a misorientation angle of 39.0±0.5° was deter- mined by means of EBSD. The small deviation from the ideal Σ9 misorientation (38.94°) in the HAADF micrograph falls well within the Brandon criterion (Brandon, 1966), and may in addition be altered by the presence of scan distortions and sample drift. The atomic structure of the present Σ27 GB reveals a


feature to compensate for non-ideal GB properties. Here, the misorientation of the two crystals is 33±1° in the HAADF micrograph and 31.7±0.5° in the EBSD measure- ment, which is close to the ideal misorientation of 31.58°. The global GB plane could not be identified by the trace analysis in this case, indicating that the global GB plane is asymmetric. The HAADF image in Figure 2c confirms the asymmetry and reveals the faceted atomic structure of this interface. A set of nanograins with a diameter of 3 nm and a third orientation is introduced (orange ellipses). This results in dissociation of the Σ27 interface into numerous triangular shaped grains bordered by symmetrical Σ3, Σ3, and Σ9 interfaces: Σ27→Σ3(111) +Σ3(112) +Σ9(122). The corresponding EBIC map in Figure 2a shows a


strong recombination activity at the Σ27 interface, whereas the recombination activity at the Σ3 and Σ9 interfaces are negligible. This difference may be caused by the observed GB structure of the Σ27 interface or by additional impurity segregation. APT analysis of that interface is shown in Figure 2d and reveals a slight C segregation at the position of the GB in the 3D ion map. The presented APT volume was reconstructed on the basis of the tip profile observed in SEM, using the corresponding reconstruction routine in the IVAS® software package. APT analysis of the Σ9 interface was not successful, but previous work on recombination inactive interfaces revealed no impurity segregation (Ohno et al., 2013; Stoffers et al., 2015a). The GB dissociation at the Σ27 interface most probably promotes the observed segregation of C and thus increases the recombination activity. This implies a significant influence of C segregation


on the GB recombination activity, in agreement with our own work (Stoffers et al., 2015a) and other researchers (Pizzini et al., 2005). A second example of a GB analyzed by the correlative


approach is shown in Figures 3–6. In this case the correlative approach was used to study a single Σ9 interface with a higher recombination activity than the Σ27 interface discussed above. Figure 3 shows the EBIC map (a), GB CSL character extracted from the EBSD measurements (b) toge- ther with an SEM/TKD overlay image of the corresponding TEM lamella (c), and APT specimen (d). The grains appear nearly in the same color in the TKD map, as both grains are oriented close to the <110> zone axis. The GB position (white line) is highlighted by the white arrows. The mis- orientation of both crystals measured in the HAADF micrograph in Figure 4 is 38±1°, which is very close to the ideal misorientation of 38.94°. The observed atomic struc- ture in this case is again very complex and shows a strong faceting of numerous Σ9 segments with different GB habit planes. Several straight (114) and (122) facets of varying lengths in the range of 10nm were observed. The interface structure observable in Figure 4 contains a straight (122) segment and a slightly bent segment close to (114), which consists of the same structural atomic motifs as observed in the first example in Figure 2c. Due to the strong curvature of the GB plane, the atomic structure is heavily distorted and no periodicity similar to the previous example (Fig. 2) was observed, although the same structural units can be found along the whole GB. The corresponding APT measurement is presented in Figures 5 and 6. The observed impurity decoration follows the GB interface, which consists of two segments within this APT specimen. Figure 5a represents the complete APT measurement viewed along the common GB


plane direction, where only C and Si were plotted. The wide field of view and high detection efficiency of the LEAP5000 XS system enables the clear observation of multiple crystal- lographic poles on the detector, as can be seen on the detector density maps in Figures 5b and 5c for the blue and red plane shown in (a). The (113) pole in the upper grain and the (111) pole in the lower grain were selected for optimization of the reconstruction parameters. Small volumes corresponding to the dashed circles were recon- structed to confirm correct lattice plane distances, as can be seen in Figures 5d and 5e. In Figure 6, the 3D ion maps of the volume around the


GB are plotted for the detected impurity species. These 3D maps nicely demonstrate the preferential segregation of different impurity species at the facets: Fe andNare detected in form of the complex FeN2+ at m/z = 35Da and decorate both interface segments. The detection as a complex ion does not necessarily imply that these species are segregating in a molecular form. Rather, it is likely that they are segregating individually. However, the atomic species Fe and N were not observed in the mass spectra, most probably due to peak overlap of Fe2+ with Si+ (28 Da) and N+ with Si2+ (14 Da). Therefore, the given (Fe+N) concentration should be taken as a lower limit of the effectively segregated amount.


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233  |  Page 234  |  Page 235  |  Page 236  |  Page 237  |  Page 238  |  Page 239  |  Page 240  |  Page 241  |  Page 242  |  Page 243  |  Page 244  |  Page 245  |  Page 246  |  Page 247  |  Page 248  |  Page 249  |  Page 250  |  Page 251  |  Page 252  |  Page 253  |  Page 254  |  Page 255  |  Page 256  |  Page 257  |  Page 258  |  Page 259  |  Page 260  |  Page 261  |  Page 262  |  Page 263  |  Page 264  |  Page 265  |  Page 266  |  Page 267  |  Page 268  |  Page 269  |  Page 270  |  Page 271  |  Page 272  |  Page 273  |  Page 274  |  Page 275  |  Page 276  |  Page 277  |  Page 278  |  Page 279  |  Page 280  |  Page 281  |  Page 282  |  Page 283  |  Page 284