news digest ♦ Lasers “Investments for the Future” initiative.
This equipment will contribute towards improving the research capabilities of the “nanoMIR” research group within the IES, a world-leading group for III-V semiconductor components within the GaSb antimonides sector.
More specifically, Eric Tournié, who heads up this group, has confirmed that “this equipment will make it possible to further strengthen the work carried out on innovative optoelectronic components, laser diodes and photodetectors, operating in infrared, as well as the work on their integration with silicon, the core technology for electronics.
The applications for these components include major economic sectors (photonics, defence, telecommunications, etc.) and societal sectors (environment, health, etc.).”
Eric Tournié has also confirmed that, “in addition to outstanding performance capabilities, the Riber MBE412 system sold to the IES offers very high modularity and a unique technique for processing large-format substrates for the controlled development of III-V semiconductor- based nanostructures. The refurbishment of the IES’ Compact21 reactor will transform it into a totally new, modular cluster system, with an identical configuration to that of the MBE412 system.”
This equipment, claimed to be the only one of its kind in Europe, will make it possible to structure academic and industrial research in the GaSb-based semiconductor component field, in line with the objectives of the EquipEx program.
This order with a leading European laboratory, within the framework of France’s investments for the future program, confirms Riber’s key position in the semiconductor research sector.
Soitec and IntelliEPI to improve GaAs services
The two companies have signed an agreement which includes a technology license granted by Soitec to IntelliEPI. The agreement may be extended to address future business opportunities in the GaAs market, including equipment transfer
Soitec, and Intelligent Epitaxy Technology, a provider of InP, GaAs, and GaSb epitaxial wafers to the electronics and optoelectronics industries, have signed a collaborative agreement to better serve the GaAs market.
This partnership aims at addressing the market requirements for a reliable second source, while also extending the leadership position of both companies in the GaAs market as well as delivering the best product at the lowest cost for the customers.
“We are delighted to announce the license of our technology leading to a second source for our products for our key GaAs customers ,” says Bernard Aspar, Senior Vice President and Soitec’s Communication & Power Business Unit General Manager.
“This collaborative agreement will reinforce our GaAs technology and product know-how while, at the same time, offering Soitec’s customers supply-chain security,” adds Yung-Chung Kao, IntelliEPI President and CEO.
GaAs is a compound of the elements gallium and arsenic. It is a III-V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared LEDs, laser diodes, solar cells and optical windows.
GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.
Versatile GaAs-AlGaAs nanowire lasers
III-V nanowires could potentially be used in multiple applications if several problems are overcome. These applications include silicon-on-chip optical interconnects, optical transistors, integrated optoelectronics for telecoms, laser arrays and bbiological and environmental sensing
Thread-like semiconductor structures called nanowires, so thin that they are effectively one-dimensional, show
118
www.compoundsemiconductor.net January / February 2014
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169