Telecoms ♦ news digest
and beyond, as the business continues to diversify, and cost synergies from recent acquisitions are realised.
Drew Nelson, CEO and President of IQE plc, says, “I am very pleased to announce that we expect to report a record level of revenue and earnings for 2013 as a result of IQE’s increasingly strong position within the Compound Semiconductor Industry, and our rapidly strengthening product portfolio. As a result of strong cash flows we have also successfully reduced net debt and the deferred consideration owing on prior acquisitions.”
“We look forward to further increasing cash flows and earnings during the current year and beyond as we maintain our strong position in wireless and continue to leverage opportunities to exploit our products in other high-growth markets.”
Marktech launches InGaAs/ InP PIN photo diodes
These 800nm to 1750nm range wafers are suited for use in photo detectors, linear arrays and image sensors
Marktech Optoelectronics is introducing its line of PIN photo diode components based on InGaAs/InP technology.
These devices are currently available in a TO-46 flat top package with a spectral sensitivity in the 800nm to 1750nm range.
No integrated thermal electric cooling is utilised on any of the firm’s PIN photo diodes, thereby reducing costs and improving overall efficiency.
These devices are available from Digi-Key.
Custom package options and die are also available. In addition to PIN photo diodes, Marktech offers foundry services for epitaxial growth of SWIR wafers in the 1.0 mm to 2.6 mm range, using InP as the base substrate. Marktech is currently producing these wafers in 2”, 3” and 4” diameters.
The firm says among the applications for these wafers are photo detectors, linear arrays and image sensors. Photo detectors processed using its epitaxial wafers are claimed to provide significant advantages, including lower dark current, better shunt resistance and overall improved performance at lower operating temperatures.
Marktech will be exhibiting at Photonics West in San Francisco between February 4th and 6th, 2014. The company representatives will be at booth #5143 and describe its line of PIN photo diode components based on InGaAs/InP technology.
New LNA GaAs amplifiers developed by Custom MMIC
The gallium arsenide 10 to 17 GHz amplifiers are designed for communication applications
Custom MMIC is adding two new low noise amplifiers, the CMD167 and the CMD167P3, to its product line.
Both LNAs are ideally suited for EW and communications systems where small die size and low power consumption are needed.
The CMD167 is an efficient, ultra low noise GaAs MMIC amplifier that operates from 10 to 17 GHz. The CMD167P3 is the packaged version of the amplifier which operates from 8 to 16 GHz.
PIN Photo Diode
Photo Diode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity.
This allows for increased flexibility and options in a variety of applications ranging from fibre optics and high speed optical communications to medical and chemical analysis.
New ultra low noise GaAs amplifiers which operate from 10 to 17 GHz
January / February 2014
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