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SemiNex awarded ISO 9001:2008 certification


The indium phosphide (InP) laser manufacturer has achieved certification from TUV USA


SemiNex Corporation has joined over one million companies and organisations worldwide in implementing ISO 9001:2008. SemiNex’s Quality Management System received ISO 9001:2008 certification from TUV USA, part of TUV NORD International.


SemiNex lasers use high precision InP based materials to convert electrical energy directly and efficiently into coherent optical energy. The company says its proprietary material structure uses a non-conventional doping profile and a unique application of quantum physics that provide superior performance in the areas of thermal efficiency, electrical efficiency and total optical power.


Achieving ISO 9001:2008 certification usually takes up to sixteen months, and typically takes between seven to twelve months. SemiNex was able to obtain certification in just three months, due in large part to the previously- existing comprehensive quality system which had been continually improved over the last five years.


ISO 9001:2008 is an internationally-accepted set of standards for quality management systems.


SemiNex views the certification as a formal declaration of its commitment to implementing a process that supplies customers with consistently high-quality laser diodes. This is reflected in its official Quality Policy: We design & build laser products that consistently meet or exceed our customer expectations. Continual improvement is expected in everything we do.


“Since the founding of SemiNex Corporation, we’ve focused on providing quality products and technical support to our customers,” says SemiNex President and founder David Bean. “Achieving ISO certification is a reflection of the processes and attention to detail already in place at SemiNex. I am very proud of the SemiNex team for their dedication to providing our customers with the best in laser performance and quality.”


The SemiNex team approached certification with the mindset that a review of the company’s processes and procedures would be of value both internally and externally. In addition to the formalisation of the Quality Policy, the team worked together to ensure that all internal procedures and policies reflected this policy. Externally, SemiNex believes that customers will benefit from the continuous improvements made in support of ISO certification.


SemiNex Corporation designs and manufactures high- power semiconductor lasers for use in military, medical, and dental applications. SemiNex’s unique product designs enable lasers with high powers and improved thermal performance. The firm says its diode technology dramatically lowers the cost per watt of laser power, especially compared to alternate technologies such as sold-state lasers and fibre lasers.


Riber bags order for MBE research reactor in France


The Riber MBE412 system sold to the IES offers a technique for processing 4-inch substrates for the controlled development of III-V semiconductor-based nanostructures


Riber has announced the sale to the IES electronics institute in Montpellier (France) of an MBE412 III-V system, and of a major upgrade for an existing Compact21 system.


MBE412 System


These acquisitions will further strengthen and renew the fleet of equipment in place at the IES, a joint research unit involving Université Montpellier 2 and the Institute for Engineering and Systems Sciences (INSIS), which is part of the French national centre for scientific research (CNRS).


Riber’s MBE 412 is suited the low-cost growth of arsenides, phosphides, antimonides, nitride, oxides and silicon germanium films on a single 4-inch wafer.


This versatile machine produces film thickness uniformities of less than one percent and features 12 cell ports symmetrically distributed around the chamber. These ports can be mounted with a vast range of sources, including effusion cells, crackers, plasma sources, gasinjectors, and electron-beam-heated sources.


They are being funded by the “equipment for excellence” (EquipEx) program in connection with France’s


January / February 2014 www.compoundsemiconductor.net 117


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