news digest ♦ Telecoms
“Firecomms’ Resonant Cavity LED fibre optic technology delivers major improvements in performance and cost over competing fibre optic products,” says Dan Triplett, Corporate Line Manager, Victory Sales. “Our Sales team is excited to represent Firecomms and deliver this value to our customers.”
As an extension of Firecomms’ in-house sales team, Victory Sales provides a sizable sales team, employing twenty six sales engineers with a total staff of thirty six. The company serves customers in fouurteen states within the North Central region.
“Victory Sales’ impressive team of technically savvy field reps contributes significant value to both the Firecomms organisation and to the large customer base in their region,” says Lawrence Thorne, Firecomms Vice President of Sales & Marketing, The Americas. “With a proven consultative selling technique, the company is very successful in working with key accounts in the North Central U.S.”
Firecomms recently announced the full production and shipping of its new RedLink line of fibre optic transmitters and receivers for the industrial command, control and communications markets.
The RedLink series of DC-capable transmitters and receivers are drop-in compatible with the Versatile Link range of products. Firecomms RedLink devices are well suited for low-speed and DC-capable applications, such as IGBT/thyristor control and fault feedback or field I/O, in areas where immunity from harmful EMI or high voltage signals is required.
Firecomms is a provider of fibre optic solutions and optical transceivers, combines compound and silicon semiconductor technology with inventive small-scale integration, The company develops products that drive communications networks in power and energy, industrial, transportation, medical and consumer markets.
IQE and collaborators to present III-V high speed low voltage technology
The InGaAs/GaAsSb FET technology shows a potential use in high performance devices that operate with a very low power consumption and voltages to enable the ‘Internet of Things’
IQE, Pennsylvania State University and NIST will present a joint paper on recent key developments in compound semiconductor device technologies for high speed and
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www.compoundsemiconductor.net January / February 2014
low voltage/low power applications at the International Electron Devices Meeting (IEDM).
The paper to be presented is titled, “Demonstration of InGaAs/GaAsSb Near Broken-gap Tunnel FET with Ion=740µA/µm, GM=700µS/µm and Gigahertz Switching Performance at VDS=0.5V”.
The IEDM conference addresses key topics affecting future semiconductor technologies and is attended by a global audience including representatives from major chip producers worldwide.
The presentation will report on research leading to the demonstration of near broken-gap tunnel field effect transistors (NBTFETs) with a 200nm channel length that exhibited record drive current (ION) of 740µA/µm, intrinsic RF transconductance (GM) of 700µS/µm and a cut-off frequency (FT) of 19GHz at a source-drain voltage (VDS) of 0.5V.
The work demonstrates the potential use of InGaAs/ GaAsSb based FET technology to produce high performance devices that operate at very low voltages. They offer the low power consumption and high efficiencies needed for the next generation of electronics and communications devices with the ability to operate in highly energy constrained environments. The technology can be used in a wide range of applications that will enable the ‘Internet of Things’.
Versatile GaAs-AlGaAs nanowire lasers
III-V nanowires could potentially be used in multiple applications if several problems are overcome. These applications include silicon-on-chip optical interconnects, optical transistors, integrated optoelectronics for telecoms, laser arrays and bbiological and environmental sensing
Thread-like semiconductor structures called nanowires, so thin that they are effectively one-dimensional, show potential as lasers. These lasers could be used for applications in computing, communications, and sensing.
Now, scientists at the Technische Universität München (TUM) have demonstrated laser action in semiconductor nanowires that emit light at technologically useful wavelengths and operate at room temperature.
They have documented this breakthrough in the journal Nature Communications and in two Nano Letters papers, where they have disclosed further results showing enhanced optical and electronic performance.
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