March, 2014
www.us-tech.com What’s Inside That USB Drive? Continued from previous page For this evaluation, a 32GB USB memory
device was chosen as the test subject and different CT scans with different resolutions were per- formed at the GE Measurement & Control facility in Wunstorf, Germany. Visualizations of the CT results were produced by Volume Graphics in Heidelberg, Germany. In performing the NDT analysis of the USB
memory device, detailed views and virtual cross sections provided more information about the design and construction of the memory device and the technologies that were employed in the device. The memory device’s PCB, a small number of pas- sive components, the controller dice, and two stacked memory die were all visible in the x-ray CT images. Analysis of the x-ray CT images showed that the packaging technologies used in the newer USB memory device are nearly the same as those packaging technolo- gies employed in the 2008 USB mem- ory device. Progress in development of the memory devices was impacted mainly by the semiconductor indus- try-in this case, by the producer and supplier of the memory chips. But the NDT x-ray images did provide some interesting information. During analysis of the x-ray CT
results, especially of the two-dimen- sional (2D) virtual cross sections,
ly CT techniques) can be useful for the evaluation and characterization of miniature electronic pack- aged devices, such as the USB memory devices used as test cases in this report. To achieve opti- mum results using NDT x-ray analysis, a good material contrast of the sample and high resolu-
tion of the x-ray system are essential. In addition, working with samples with known internal struc- tures is a useful way to evaluate NDT methods. Inspection of different USB memory devices from different technological periods with NDT x-ray analysis systems has shown the dominance of semiconductor development over recent years in the packaging of those USB memory devices. The use of 14-bit temperature-stabilized x-ray detec- tors has shown the inside of these memory devices by virtually removing the outside packaging and showing the internal contents, including very thin copper structures on the silicon memory die. Contact: phoenix|x-ray, GE Sensing &
A slightly different 3D overview visualization of the scanned 32GB USB memory device.
Inspection Technologies GmbH, Niels-Bohr-Str. 7, D-31515 Wunstorf, Germany % +49 5031 172-0 E-mail:
phoenix-info@ge.com Web:
www.ge-mcs.com/phoenix or
http://ge-mcs.com/speedscan r
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These images show 3D overview (above) and 2D plain view (below) of metallization and bonding pads on the controller die’s surface. The measured diameter of the quadratic coil (left) is 219µm.
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structures were discovered on the controller die’s surface. A more detailed evaluation of the x-ray images showed the gold bond-wire connections on the die. With respect to the current metallization technolo- gies in semiconductor backend processes, only copper was visible as the conductive material for the bond- wire structures. These results reveal the rapid
development of x-ray detectors in recent years and the effectiveness of these systems in virtually removing the package of a device for views of the internal circuitry. The x-ray CT recording was performed with GE’s 14-bit grayscale temperature-stabi- lized DXR x-ray detector with CsI- scintillator. After recording these results, an additional x-ray CT scan was performed for comparison purpos- es on the same USB memory device, using a 12-bit x-ray detector with
Gd2O3 scintillator. This second x-ray CT scan showed structures on the die surface only poorly, appearing essen- tially as noise in the images. NDT x-ray techniques (especial-
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