Page 6
www.us-
tech.com
September, 2016 Published By:
Mid-Atlantic Tech Publications, Inc.
Phoenixville, PA 19460
Established January, 1986 U.S. TechWorld HQ
Advertising&Editorial Offices
U.S. Tech 10 Gay Street Phoenixville, PA 19460
Phone: Fax:
e-mail: Web:
(610) 783-6100 (610) 628-3891
mail@us-tech.com www.us-tech.com
Publisher and President: Jacob Fattal
General Manager / Web Editor: Steve Leberstien
Office Manager: Megan Riley
Editor: Walter Salm
Assistant Editor: Mike Skinner
Contributing Columnist: Philip Stoten
Art Director: Mike Swavola
Cartoonist: Ted Goff
Account Executive Joseph Zummo
Copyright © 2016 Mid-Atlantic Tech Publications, Inc.
Contents not be reproduced or reprinted in any form without written permission
from the publisher. Opinions expressed on Tech Op-Ed pages and by our columnists are the views of the person or persons au- thoring the material.
Web:
www.pcbsmt.cn China in
AdvertisingSales Offices WELLINK
INTERNATIONAL
BUSINESS SERVICES, CO., LTD.
Hong Kong Office Unit 06, 13th Fl. Ricky Centre Mongkok, Kowloon, Hong Kong Tel: 852-311-16973 Fax: 852-311-16975 E-mail:
pcbsmt1997@163.com
Shenzhen Office Room 2301-2302 Chuangshan Centre, No. 6007 Shennan Road, Futian District Schenzhen City, China Tel: 0755-61319388-136 Fax: 0755-83867058 E-mail:
pcbsmt1997@163.com
Enable 2D Components Continued from page 1
ing to make two-dimensional devices, especially with co-planar electronics, we realized that the rules have to be reconsidered. Many of the estab- lished models utilized in industry just don’t apply.” The researchers, led by Rice
graduate student Henry Yu, built computer simulations that ana- lyze charge transfer between atom-thick materials. “It was a logical step to test our theory on both metals and semiconductors, which have very different elec- tronic properties,” says Yu. “This makes graphene, which is a semimetal, molybdenum disul- fide and boron nitride, which are semiconductors, or even their hy- brids ideal systems to study.” According to Yu, these ma-
Ultra-Flat Hybrid Circuits
based on the size of the device itself. How the atoms line up with
each other is also important, says Yakobson. Graphene and boron ni- tride both have hexagonal lattices, so they mesh perfectly. But molybde- num disulfide, another promising material, is not exactly flat, though it is still considered 2D.
Hybrids of 2D materials, such as
graphene-molybdenum disulfide exhib- it strange electronic properties. The
terials have been widely fabri- cated and used in the communi- ty for almost a decade, which makes analysis of them more appre- ciable in the field. Both hybrids of graphene-molybdenum disulfide and graphene-boron nitride have been successfully synthesized recently, which means the research team’s study has practical meaning and should be tested. Yakobson says that 3D materi-
limited direct contact between the two materials creates an electric field with an enlarged p/n junction.
“If the atomic structures don’t
als have a narrow region for charge transfer at the positive and negative, or p/n junction. But, the researchers found that 2D interfaces create a “highly non-localized charge trans- fer,” and an electric field along with it, that greatly increases the junction size. That could give them an advan- tage in photovoltaic applications like solar cells. The lab built a simulation hybrid
of graphene and molybdenum disul- fide and also considered graphene- boron nitride and graphene in which half was doped to create a p/n junction. Their calculations predicted the pres- ence of an electric field should make 2D Schottky (one-way) devices like transistors and diodes more tunable
match, you get dangling bonds or de- fects along the borderline,” says Yakobson. “The structure has conse- quences for electronic behavior, espe- cially for what is called Fermi-level pinning.” Pinning can degrade elec- trical performance by creating an en- ergy barrier at the interface, but the Schottky barrier does not change as expected. This is a well-known phe- nomenon for semiconductors, but in 2D it is different, and in this case may favor 2D over 3D systems. The principles put forth by the
team’s research apply to patterned hybrids of two or more 2D patches. “You can make something special, but the basic effects are always at the in- terfaces. If you want to have many transistors in the same plane, it’s fine, but you still have to consider effects at the junctions,” he says. “There’s no reason we can’t build 2D rectifiers, transistors or memory elements.” Yakobson also believes that the
2D components will be the same as what are used routinely in devices to- day. However, unless a proper funda- mental knowledge of the physics is developed they may fail to do what is planned or designed. Web:
http://news.rice.edu. r
Contents
Tech-Op-Ed ........................... 4 Tech Watch ........................... 10 Supply Chain ........................... 12 People.................................... 14 Business News......................... 16 Business Briefs........................ 17 Management......................... 18 EMS .................................... 20 ElectronicMfg. Prods............. 26 Production............................ 50 Partnering............................. 52 Distribution........................... 54 New Products....................... 100 High-Tech Events................... 112 Editorial Calendar.............. 112 Avertisers Index................... 114
Special Focus: PCB and TEST............................. 56 Product Preview: SMTAI and IMAPS.................... 72
See at SMTAI, Booth 629 and MD&M Minneapolis, Booth 1524
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116