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Accelerating penetration for CPV


INCREASING demand for green energy solutions that will replace the global dependence on fossil fuels is pushing terrestrial photovoltaic installations. The Strategy Analytics Gallium Arsenide and Compound


Semiconductor Technologies (GaAs) service report, “Terrestrial Opportunities for Compound Semiconductor Photovoltaics,” forecasts that almost 200GW will be installed worldwide by 2016, with III-V compound semiconductor-based concentrator photovoltaics (CPV) technology growing at a compound annual average growth rate of 75percent from 2011-2016.


Global demand for renewable energy is growing rapidly. The terrestrial photovoltaics (PV) market was estimated to be worth over $80 billion in 2011, with conventional silicon-based technology dominating roughly 82 percent of the total market. Strategy Analytics predicts that the terrestrial photovoltaics market will grow


with a compound average annual growth rate (CAAGR) of ten percent to reach a value of $100 billion by 2016.


“While conventional Silicon- based technologies will continue to dominate PV installations, that will decline to 74 percent by the end of 2016,” predicts Asif Anwar at Strategy Analytics. “Thin


film and CPV technologies will be the primary challengers to silicon-based PV installations. Strategy Analytics predicts that the CPV market will grow at a faster rate than conventional PV technologies and account for almost 5 percent of new PV installations by 2016.”


“Even though the performance capabilities of III-V CPV technologies are well established, deployment has been limited to date,” noted Eric Higham, GaAs Service Director. “However, the III-V CPV industry has successfully established III-V CPV technologies as economical and competitive alternatives to conventional technology solutions.


Infinera to scale InP PICs with Aixtron


THE California-based company placed the order for one AIX 2600G3 IC deposition system during the first quarter of 2011. Following delivery in the third quarter of 2011, the system will be used for next generation InP Photonic Integrated Circuits (PICs).


The system is capable of growing 49x2, 12x4 or 7x6 inch wafers. One of Aixtron´s local support teams will commission the system at the Infinera InP PIC fabrication facility in Sunnyvale, California, USA.


Fred Kish, Senior Vice President, Optical Integrated Circuit Group, comments, “We were looking for the world’s foremost MOCVD system to provide a foundation for the fabrication and scaling of our next generation PICs. The Aixtron MOCVD system will be of significant importance not only in development but also in production of these challenging indium phosphide circuits.”


He continues, “Our decision was based on several distinguishing factors and not the least being that Aixtron is considered to be the industry’s best in-class vendor. Their systems have the highest reputation and capabilities and include precise epitaxy control, excellent run uniformity as well as scalability for guaranteed future proofing. Couple that with the excellent support service and we were certain the AIX 2600G3 IC deposition system uniquely suited our needs.”


Infinera’s systems and PIC technology provide customers with simpler and more flexible engineering and operations, faster time-to-service, and the ability to rapidly deliver differentiated services.


Most recently, Infinera has demonstrated next-generation PICs capable of both 500 Gb/s and 1 Tb/s implemented on two monolithic InP chips which integrate over 600 functions.


With equipment from the world leader in LED metrology.


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Measure all optical and electrical parameters of single LEDs, high-power LEDs and LED modules.


 luminous flux  luminous intensity  chromaticity/CCT  spatial radiation pattern  thermal behavior


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October 2011 www.compoundsemiconductor.net 7


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