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news digest ♦ Power Electronics


200mm wafers is an important milestone, because it brings processing in reach of regular high- productivity 200mm fabs, allowing for an important cost reduction compared to processing smaller wafers on dedicated processing lines.


A second prerequisite for cost-effective processing, next to the wafer size, is that power devices can be fabricated with processes that are compatible with standard CMOS processes and tools. Imec proved this by processing its GaN-on-Si wafers using standard CMOS tools, yielding functional GaN MISHEMTs (metal-insulator-semiconductor HEMT).


All equipment was verified for its capability to handle the wafers, and required only minimal adjustments in software and hardware. Conventionally, gold is used for ohmic contacts and gate structures in power devices, but it makes GaN processing incompatible with conventional CMOS processing.


To overcome this, imec based the ohmic contact formation on an Au-free metallization system, and modified the Schottky gate to a gate dielectric based gold-free metal-insulator-semiconductor (MIS) structure. This introduction of the MISHEMT structure had the added advantage of reducing the high leakage current of conventional HEMTs.


Nitronex ships 500,000th GaN RF device


The company says that expanding markets and customers, alongside an already robust U.S.-based supply chain, sets the stage for continued rapid growth.


Nitronex, a designer and manufacturer of GaN based RF solutions for high performance applications in the defence, communications, cable TV, and industrial & scientific markets, has shipped more than 500,000 production devices since introducing its first production-qualified products in 2006.


Volume production began in 2009, and shipments predominantly consisted of 10 different products to five customers with a roughly even split between domestic and international sales.


184 www.compoundsemiconductor.net October 2011


“Shipping more than 500,000 devices is a testament to the early successes we’ve had in military communications, jammers, and cable TV infrastructure. We provide our customers with complete RF solutions including final, driver, and pre-driver discrete and MMIC amplifiers, product models, reliability data, and applications support,” commented Charlie Shalvoy, President and CEO of Nitronex.


“We have also established a robust supply chain with U.S. manufacturing partners based on our proprietary GaN-on-Silicon technology. We believe this is more scalable than competing technologies that are based on exotic substrates. We look forward to continued growth by expanding into emerging GaN markets such as RADAR, and eventually commercial wireless infrastructure,” he concluded.


Nitronex says its patented SIGANTIC GaN- on-Si process is the only production-qualified GaN process using an industry standard silicon substrate. This ensures a robust supply chain, which, combined with innovative new products, has positioned the company well for the significant growth expected in GaN markets in upcoming years.


II-VI declares two-for-one common stock split


This financial measure is intended to further improve the firm’s liquidity and make its shares more accessible to institutional and individual shareholders.


II-VI Incorporated has announced that its Board of Directors has authorised a two-for-one stock split of the Company’s Common Stock in the form of a 100% common stock dividend.


Shareholders of record as of the close of business on June 3, 2011 will receive one additional share of II-VI common stock for each share then owned. II-VI expects that its transfer agent, American Stock Transfer and Trust Company, will distribute the additional shares on or about June 24, 2011. There are currently approximately 31.3 million shares of II-VI common stock outstanding. Upon completion of the stock split, there will be approximately 62.6


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