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news digest ♦ Power Electronics


demand for mobile data are forcing cellular operators to expand capacity in cellular backhaul networks. RFMD’s highly integrated P2P radio chipsets help to satisfy operators’ capacity expansion requirements by optimising each front end component for next-generation high-capacity 3G/4G radios using complex modulation schemes.


The front end components deliver industry-leading narrowband performance, enabling the realization of state-of-the-art radio performance. Additionally, the broadband nature of the front end components enables radio designers to maximize design flexibility and simplify inventory bill-of-material control.


Jeff Shealy, general manager of RFMD’s Defence and Power business unit, said, “RFMD is rapidly expanding our product portfolio in support of the Point-to-Point microwave radio market. With the launch of these highly integrated radio chipsets, RFMD enables our customers to develop high- reliability, next-generation Point-to-Point radio solutions while reducing design time requirements and lowering overall bill-of-material costs.”


Each new RFMD P2P radio chipset is available in a surface mount QFN package. The integrated up- converters include a LO amplifier (with integrated x2 multiplier where applicable), IQ mixer, VVA and driver amplifier in a single package. The integrated down-converters utilise 0.15µm GaAs technology to deliver industry-leading IIP3 and noise figure performance. Finally, the integrated MMIC VCOs exhibit industry-leading phase noise performance coupled with flat output power over the frequency tuning bandwidth. To complement the new radio chipsets, RFMD also offers a comprehensive portfolio of converters and gain blocks aimed at the IF section of the radio.


Samples and production quantities are available now through RFMD’s online store at http://www. rfmd.com/products or through local RFMD sales channels.


RFMD raises the bar with qualified 65 V GaN1 process


The 65V gallium nitride process succeeds the firm’s GaN1 process for 48V and enables miniature, 0.5kW power devices with high operating efficiency for L- and S-Band military and civilian radar applications.


RF Micro Devices, a designer and manufacturer of high-performance radio frequency components and compound semiconductor technologies has qualified its GaN1 power semiconductor process technology for 65V operation.


The high reliability power semiconductor process technology supports RFMD’s GaN-based power semiconductor product designs and is also available to foundry customers through RFMD’s Foundry Services business unit.


Previously, RFMD’s GaN1 power semiconductor process technology had been qualified for 48V operation. The increase in operating voltage from 48V to 65V enables miniature, 0.5kW power devices with high operating efficiency for L- and S-Band military and civilian radar applications.


Bob Van Buskirk, president of RFMD’s Multi-Market Products Group (MPG), said, “The qualification of our 65V GaN1 power process technology enables RFMD to target multiple higher voltage market opportunities across MPG’s diversified markets while helping our foundry customers to design smaller periphery die for high power applications. RFMD continues to optimize our game-changing GaN process technology for both foundry customers and proprietary RFMD product designs, with particular emphasis on higher peak efficiency, lower power consumption and higher linearity.”


RFMD’s 48V GaN1 process technology is an established performance leader in the high power semiconductor industry, and RFMD’s 65V GaN1 process technology moves the performance bar even higher. RFMD’s 65V GaN1 process technology demonstrates a Mean-Time-to- Failure (MTTF) of 43 million hours with a channel temperature of 2000C at power densities of 10 W, a significant industry performance benchmark. The high reliability power semiconductor process is ideally suited for higher voltage operations in


176 www.compoundsemiconductor.net October 2011


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