RF Electronics ♦ news digest


Anadigics shipping volumes of multi-band PAs to Qualcomm


The new PA supports five frequency bands, enabling the multi-band Qualcomm Gobi 3000 module.


With the continued development of multi-band and multi-mode mobile devices, manufacturers are seeking new ways to help reduce board space. Anadigics says its new 5 mm x 7 mm x 1mm power amplifier (PA) offers a significant board space reduction when compared with multiple single-band 3 mm x 3 mm solutions.


develop the next-generation mobile solutions that continue to set the standard in wireless connectivity performance.”


FrequencyRange Bands WCDMA Efficiency


824 to 849 MHz UMTS Bands 5 & 19 CDMA BC 0


41% @ 28.5 dBm


880 to 915 MHz UMTS Band 8


dBm


1710 to 1755 MHz UMTS Bands 3 & 4 CDMA BC 4 & 15 41% @ 28.5 dBm


1850 to 1915 MHz UMTS Band 2


CDMA BC 1 & 14 40% @ 29.0 dBm


1920 to 1980 MHz UMTS Band 1 CDMA BC 6


39% @ 28.8 dBm


RFMD to showcase RF components At 2011 IMS


Anadigics is shipping production volumes of its AWT6521 multi-mode PA for the Qualcomm Gobi 3000 module. The highly integrated AWT6521 PA supports WCDMA/ HSPA+ and CDMA/EVDO in frequency bands used by operators worldwide, providing users with more choice in carrier networks and the freedom to go without fear of losing connectivity. It also features an RF coupler and DC blocks on RF ports. With 2 shared RF inputs, 5 separate 50 Wmatched outputs, the AWT6521 also features internal voltage regulation,


The Gobi 3000 reference design is based on Qualcomm’s MDM6200 and MDM6600 chipsets, both of which can provide support for HSPA+ data rates of up to 14.4 Mbps.


“The Gobi 3000 multi-mode platform provides high data rate wireless functionality to a broad spectrum of mobile devices,” said Jerry Miller, vice president of business development at Anadigics. “Qualcomm’s selection of our new multi-band power amplifier for the Gobi 3000 platform exemplifies the strength of our successful relationship and the performance advantages of this product. We look forward to working closely with Qualcomm to


RF Micro Devices, a designer and manufacturer of high-performance RF components and semiconductor components, will showcase its broad portfolio of products and technologies for the wireless and wired broadband markets at the 2011 IEEE International Microwave Symposium (IMS).


At the symposium, RFMD will highlight its portfolio of products servicing a diverse range of end-market segments including: Broadband Transmission, Defence and Aerospace, Point-to-Point Microwave Radio, WiFi, Wireless Infrastructure, Wireless Consumer Products, WiMAX and SmartEnergy.


The RFMD products to be displayed include a variety of GaN-based products, including RFMD’s high power transistors and ICs. The firm will also showcase the RFMD2080/81 IQ modulators with integrated LO oscillators, designed for Point-to- Point and other software defined radio applications. Other Point-to-Point products to be exhibited include Up/Down Converters, MMIC VCOs and other products addressing the RF and IF functions of the Point-to-Point radio transceiver.


The newly released RFSA2714 and RFSA2724 October 2011 www.compoundsemiconductor.net 121


40% @ 28.8


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200