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Power Electronics ♦ news digest million common shares outstanding.


Francis J. Kramer, president and chief executive officer of II-VI Incorporated, stated, “Today’s stock split reflects our continued commitment to building value for our shareholders and demonstrates the confidence of our Board of Directors and management in both the fundamentals and growth potential of our business. In addition, the split is intended to further improve our liquidity and to make our shares more accessible to institutional and individual shareholders.”


II-VI Incorporated is a vertically-integrated manufacturing company that uses crystal growth technology to manufacture and markets products for diversified markets including industrial manufacturing, military and aerospace, high- power electronics and telecommunications, and thermoelectronics applications.


Headquartered in Saxonburg, Pennsylvania, with manufacturing, sales, and distribution facilities worldwide, the company produces numerous crystalline compounds for infrared laser optics, SiC for high-power electronic and microwave applications, and bismuth telluride for thermoelectric coolers.


Transphorm only company to offer fully GaN solution


The company’s 600 V transistor using its patented EZ-GaN technology is ultra-efficient, compact and easy-to-embed, and cuts switching losses by up to 95%.


Transphorm has unveiled its EZ-GaN transistor, the latest in the company’s line of breakthrough products designed to eliminate the pervasive power waste that occurs during power conversion in everyday electrical systems and devices.


The company showcased the module at PCIM Europe 2011 Conference.


At a time when energy and environmental constraints call for dramatic improvements in energy efficiency, Transphormsays it is the first company to provide a viable solution to the power conversion problem.


Transphorm’s GaN products are designed to replace conventional silicon-based power conversion technology, which can no longer provide efficiency gains without compromising system performance. Transphorm is redefining electric power conversion to help customers optimise their use of existing electrical generation.


Transphorm’s 600 V transistor replaces silicon- based super junction transistors and IGBT devices in switch mode power conversion circuits, such as bridge converters and inverters, in order to reduce switching losses by up to 95 percent. The release of the transistor closely follows the EZ-GaN diode launched in March. This, Transphorm says, makes it the world’s only company offering customers a Total GaN solution.


“This is the first 600 volt GaN HEMT device to survive accelerated life testing per JEDEC industry standards, which Transphorm has demonstrated in engineering tests,” said Umesh Mishra, CEO of Transphorm. “Our transistor has proved that it is possible to switch extremely fast without increasing electromagnetic interference (EMI), a feat never before achieved and most believed to be infeasible.”


Transphorm has redefined power conversion by developing and supplying efficient, compact GaN solutions for electrical energy conversion. The transistor is the latest product that offers customers new opportunities to reduce the size of systems while improving and maintaining efficiency, something that is no longer possible with Silicon- based conversion devices. For example, a unique aspect of the transistor is its improved packaging, which reduces ringing that results in equal or lower EMI.


“Our competitors are using Silicon devices, which have up to 25 times as much switching losses compared to our transistor,” said Primit Parikh, President of Transphorm. “Transphorm customers are already using the transistor in products such as power suppliers, PV inverters and motor control systems.”


By using a proprietary EZ-GaN transistor and diode, Transphorm can reduce power system size, increase energy density while reducing overall system cost. The EZ-GaN transistor is the latest product aimed to achieve new levels of product


October 2011 www.compoundsemiconductor.net 185


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