news digest ♦ Power Electronics
The firm says these products offer power and efficiency achieving typical power-added efficiencies (PAEs) of 60%. This results in a reduction in power consumption of up to 20% over existing solutions.
“Cree is pleased to offer these industry leading S-Band GaN HEMT devices for a variety of civilian and military applications, such as air traffic control, weather radar, and homeland defence. Thermal management is a key consideration for radar systems and Cree GaN HEMT products are enabling ultra-high efficiency solutions, which result in lower dissipated power, simplified power distribution, smaller device footprints and lighter weight systems,” said Jim Milligan, Cree, director of RF.
The S-Band transistors, CGH31240F and CGH35240F, are fully internally matched to 50 Ω and provide saturated RF output power of 240 watts over 2.7 to 3.1 GHz and 3.1 to 3.5 GHz, respectively, with power gains of greater than 11dB in small package footprints (0.9” x 0.68”) with typical power added efficiencies of 60%.
The devices also demonstrate impressive pulse droop of less than 0.2dB at specified operating conditions, owing to the combination of high efficiency and the superior thermal properties of GaN on SiC when compared to other technologies such as GaAs and Si.
The CMPA2735075F is a two-stage GaN HEMT high power MMIC amplifier providing a saturated RF output power of 75 watts over 2.7 to 3.5 GHz with a power gain of 20dB in a small package footprint (0.5” x 0.5”). This, Cree says is the first and only S-Band GaN HEMT MMIC HPA on the market which offers 60% typical PAE with RF pulse widths of 300 microseconds and a 20% duty cycle.
EPC reveals second generation 200 V eGaN power transistor
The EPC2010 delivers high frequency switching with enhanced performance in a lead-free, RoHS compliant package.
Efficient Power Conversion Corporation (EPC) is 180
www.compoundsemiconductor.net October 2011
introducing the EPC2010 as the newest member of its second-generation enhanced performance eGaN FET family. The EPC2010 is environmentally friendly, being both lead-free and RoHS-compliant.
The EPC2010 FET is a 200 VDS device with a maximum RDS(ON) of 25 milliohms with 5 V applied to the gate. This eGaN FET provides significant performance advantages over the first- generation EPC1010 eGaN device. The EPC2010 has an increased pulsed current rating of 60 A (compared with 40 A for the EPC1010), improved RDS(ON) at very low gate voltages, and lower capacitance.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2010 is smaller and has many times superior switching performance. Applications that benefit from eGaN FET performance include high-speed DC-DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.
“EPC was the first company to make gallium nitride power FETs commercially available. With our second-generation of products, we are now raising the bar for the performance of gallium nitride FETs. In addition, our new generation of eGaN products are the first gallium nitride FETs to be offered as lead-free and RoHS-compliant,” said Alex Lidow, co-founder and CEO.
In 1k piece quantities, the EPC2010 is priced at $5.06 and is immediately available through Digi-Key Corporation.
Kyma enhances product portfolio with AlGaN templates
Initially developed as part of an advanced mid UV LED technology research project, the firm is hoping its AlGaN Templates will also highly impact high power RF communications and high power switching electronics.
Kyma Technologies, a supplier of crystalline nitride semiconductor materials, has added AlGaN templates to its product portfolio.
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