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Ammono n-GaN substrates in a different class


Ammono has added a new series of high transparency n-type gallium nitride substrates to its portfolio. During the last twelve years Ammono has been developing a technology allowing the manufacture of GaN wafers with carrier concentrations between 2x1017 and 2x1020 cm-3. Today the standard n-type product has a carrier concentration of 1019cm-3.


Responding to market needs, Ammono is introducing new products based on an innovative n-type material which has a higher transparency and a lower carrier concentration of 3x1017cm-3.


The firm believes its new ammonothermal GaN substrates present additional advantages for the production of LEDs, UV LEDs and also for photovoltaic applications. The dislocation density in this


material remains at a level of 5x104 cm-2 which Ammono says is currently the best commercially available. Initially Ammono will offer high transparency substrates in form factors of 10 mm x 10 mm square wafers and circular 1” wafers. In 2012 besides its standard 2” n-type AMMONO- GaN substrate, the company aims to introduce a 2” product based on this new high-transparency material.


LG Electronics welcomes Aixtron reactor for GaN/Si applications Aixtron has announced that LG Electronics


Woomyeon R&D Campus (LG Electronics Advanced Research Institute), an existing customer in South Korea, has placed an order for one AIX G5 HT MOCVD system in an 8x6-inch wafer configuration. LGE will use the system to develop GaN-on- Silicon power electronics in partnership with Aixtron.


The contract also includes a cooperation agreement in order to optimise LGE´s GaN/Si processes and to accelerate its proprietary device-oriented production.


The reactor was ordered in the first quarter of 2011 and following delivery in the third quarter of 2011 will be installed and commissioned by a local Aixtron service support team alongside the company’s already existing Aixtron MOCVD systems at a state-of-the-art facility in South Korea.


LGE will develop power electronic devices offering the best combination of performance and cost demanded by markets such as home appliances and electric vehicles.


Aixtron equipment is particularly well suited for customers such as LGE who plan to transition from R&D to mass production. LGE’s application will also benefit from the excellent thickness uniformity across the wafers and across the platter as well as run-to-run dependability.


Overall, the AIX G5 is the appropriate choice to fulfil the needs for LGE’s special process parameters and device structure. It will also directly address the requirements for large-wafer process developments right from the start.


The mutual trust arising from many years of cooperation between LGE and Aixtron will now continue through the new partnership for this GaN-on-Silicon project which will involve all of their professional expertise in the installation and process development. In due course, the joint development project will be a great success further proving LGE’s leadership in GaN-on-Silicon technology, something that has the potential for great change across the nitride industry.


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www.SEMI-GAS.com October 2011 www.compoundsemiconductor.net 13


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