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M/A-COM Tech extends portfolio with high power GaN HEMTs


With its new gallium nitride transistors, the firm is targeting L- and S-Band pulsed radar applications.


M/A-COM Technology Solutions is introducing a new family of GaN RF Power transistors.


The announcement was made at MTT-S 2011, one of the largest RF & Microwave Product Exhibition in the industry. This new family of products targets L- and S-Band pulsed radar applications and leverages M/A-COM Tech’s rich heritage of providing both standard and custom solutions.


M/A-COM Tech’s GaN on Silicon Carbide (GaN- on-SiC) products, offered as transistors and pallets,utilise a 0.5 µm HEMT process and exhibit attractive RF performance parameters with respect to power, gain, gain flatness, efficiency and ruggedness over wide-operating bandwidths. Featured benefits of M/A-COM Tech’s GaN products include high breakdown voltage, superior power density, and higher and broader frequency operation than silicon.


A list of the new products is given below. Part Number


(MHz) Pout (W)


MAGX-002731-030L00 3100


30 peak


MAGX-002731-100L00 3100


MAGX-002731-180L00 3100


MAGX-003135-030L00 3500


30 peak MAGX-003135-180L00 100 peak 180 peak 3500 180 peak


MAGX-000912-125L00 1215


1215 125 peak


MAGX-000912-250L00 250 peak


MAGX-001214-125L00 1400


MAGX-001214-250L00 1400


MAGX-001220-100L00 2000


MAGX-000035-030000 30 average


MAGX-000035-100000 100 average


125 peak 250 peak 100 peak CW 1 - 3500 CW


“M/A-COM Tech leverages more than 30 years of experience in developing industry-leading high power transistors to deliver these top-quality GaN power devices,” stated Chuck Bland, Chief Executive Officer of M/A-COM Tech. “Our highly versatile family of GaN products offers customers a single solution combining both the high power handling and high-voltage operation typically found in silicon LDMOS devices, but with higher frequency performance more often associated with GaAs devices. Innovative solutions for demanding applications like these are what customers have come to expect from the First Name in Microwave— M/A-COM Tech.”


Frequency Pulse/Duty 2700 -


500µs / 10% 2700 -


500µs / 10% 2700 -


500µs / 10% 3100 -


500µs / 10% 3100 -


The latest ABI research shows increasing demand for high power, pulsed RF devices in S- and L-band air traffic control, marine, and military radar applications. “M/A-COM Technology Solutions’ silicon based products have been a major force for high power, pulsed RF applications in the S- and L-Band radar market, and the extension into GaN technology positions their product line for continued market leadership”, said Lance Wilson, Research Director, RF Components & Systems.


M/A-COM Tech plans to release additional products that target applications such as L-Band radar, avionics, EW, and MILCOM, as well as general purpose devices later this year.


October 2011 www.compoundsemiconductor.net 109


500µs / 10% 960 -


2ms / 10% 960 -


2ms / 10% 1200 -


2ms / 10% 1200 -


2ms / 10% 1200 -


500µs / 10% 1 - 3500


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