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news digest ♦ LEDs


ever produced (10kV); and numerous processing developments to enhance SiC MOSFET interface quality and reliability. Cree has been awarded more than 50 patents on SiC MOSFET technologies, with numerous patents pending.


Designated the CMF10120D, the new SiC MOSFET is housed in an industry-standard TO-247 package.


CMF10120D power devices are fully qualified and released for production. To locate a distributor, please visit www.cree.com/products/power_distr. asp. For more information about Cree’s 1200V SiC MOSFET devices or any of Cree’s 600V, 1200V and 1700V SiC Schottky diodes, visit www.cree.com/ power.


For additional product and company information, please refer to www.cree.com.


Tough LED Light Bars


The CLA Series is the latest addition to PATLITE’s family of high intensity LED Light Bars offering 7 light window lengths from 100mm to 1500mm, and protection ratings of IP-66 / 67 / 69K to withstand the high pressures and temperatures of steam jet cleaning


An operating temperature range from -40OC to +60OC and a uniform light pattern make it ideal for food, beverage and pharmaceutical, and a host of other applications where a cool, low-power light source is required. Where glass lensing cannot be used, the high-impact polycarbonate body reduces installation costs since there is no need for protective housings.


Wafer Bonding Report


Yole Développement announces the publication of its technology study and market research report, Permanent wafer bonding report


Historically developed for MEMS & SOI substrates, the wafer bonding technology is today becoming a key processing technology for a wide range of applications including LEDs, Power Devices, RF and Advanced Packaging.


The wafer bonding market is a very complex one crossing different wafer sizes (from 2’’ to 12’’), different applications (Advanced Substrates such as SOI, MEMS, LEDs, CMOS Image Sensors, Power Devices, RF Devices & Advanced Packaging) and different bonding technologies (Adhesive, Anodic, Fusion, Direct Oxide, Eutectic, Glass Frit, Metal Diffusion).


Yole Développement’s report aims at giving a vision, crossing what the wafer bonding technologies will be over the 2010-2016 time line.


Market Trends


Wafer bonding is usually defined as a process that temporarily or permanently joins two wafers or substrates using a suitable process. Historically developed for MEMS and then SOI wafers, wafer bonding technology has shifted to non-mainstream IC applications over the last years. Our report aims at analyzing the market perspectives and technical trends for permanent bonding.


Wafer bonder can be also used for LEDs or Power Devices. Indeed, in a typical LED active region, spontaneous emission scatters photons in all directions. If the substrate material has a smaller band gap than the active region, approximately half of the light is absorbed in the substrate; significantly reducing device performance. So, one of the manufacturing solutions for photon loss involves bonding a wafer containing an array of devices to another wafer that provides both a reflective surface for maximum light extraction and a heat sink for thermal management. And of course, over the 5 past years, much attention has been given to this technology for 3D integration of memories for example.


68 www.compoundsemiconductor.net October 2011


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