This page contains a Flash digital edition of a book.
RF Electronics ♦ news digest


Bob Van Buskirk, president of RFMD’s Multi-Market Products Group (MPG), said, “The qualification of our 65V GaN1 power process technology enables RFMD to target multiple higher voltage market opportunities across MPG’s diversified markets while helping our foundry customers to design smaller periphery die for high power applications. RFMD continues to optimize our game-changing GaN process technology for both foundry customers and proprietary RFMD product designs, with particular emphasis on higher peak efficiency, lower power consumption and higher linearity.”


RFMD’s 48V GaN1 process technology is an established performance leader in the high power semiconductor industry, and RFMD’s 65V GaN1 process technology moves the performance bar even higher. RFMD’s 65V GaN1 process technology demonstrates a Mean-Time-to- Failure (MTTF) of 43 million hours with a channel temperature of 2000C at power densities of 10 W, a significant industry performance benchmark. The high reliability power semiconductor process is ideally suited for higher voltage operations in next generation military, radar, and public/defence mobile radio applications.


Microsemi to exhibit advanced RF power semiconductors at IMS2011


The firm will showcase its expanded power transistor family and military-grade microwave amplifiers and subsystems from newly acquired AML Communications.


Microsemi Corporation will display its family of RF components and subsystems for radar systems, defence electronics and unmanned aerial vehicle (UAV) systems at the IEEE Microwave Theory & Techniques Society’s International Microwave Symposium for 2011.


Microsemi will be showing its broad line of RF power transistors, including SiC UHF static induction transistor devices that offer high peak power for Class AB systems with a 300-microsecond pulse width, and a recently announced family of GaN-on-SiC that deliver maximum performance with superior power, gain,


bandwidth, drain efficiency and reliability. The company’s new GaN-on-SiC devices enable the development of next-generation radar systems operating in the 2.7 GHz to 3.5 GHz frequency band.


Microsemi also will be displaying products acquired from its recent purchase of AML Communications. The company designs and manufactures a wide range of microwave low-noise and power amplifiers for military and commercial platforms operating across the 1 MHz to 40 GHz frequency range. AML’s products increase the scale of Microsemi’s RF component and subsystem offering and add a number of complementary technologies to the company’s RF solution portfolio.


Microsemi expands S-Band RF portfolio with GaN-on-SiC devices


The firm’s gallium nitride based products continue to advance power transistor technology to enable next-generation pulsed radar and other mission- critical systems.


Microsemi Corporation, has expanded its family of S-band RF power transistors to include devices that use advanced GaN-on-SiC process technology.


The company’s latest high-pulsed power transistors deliver industry-leading peak power and power gain for radar systems operating in the 2.7 GHz to 3.5 GHz frequency band.


“This is a significant step in Microsemi’s ongoing strategy to extend its product development and marketing initiatives to support the increasingly challenging requirements of next-generation air traffic control and other radar systems,” said Charlie Leader, Microsemi vice president and general manager.


“By expanding our power transistor offering beyond traditional silicon material to use the latest compound semiconductor technologies, we take performance to the next level, create new markets for our products, and demonstrate our continuing commitment to customers in the radar systems development business.”


October 2011 www.compoundsemiconductor.net 111


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200