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RF Electronics ♦ news digest


linear gain blocks that offer useful improvements. They appreciate that design requirements change all the time,” said Alexander Kopp, RF designer, Andrew Wireless Systems / CommScope, Buchdorf, Germany. “A more linear RF signal is very important, and with very low current drain, we can reduce a system’s thermal dissipation. The TriQuint team has offered us great support.”


TriQuint’s two new amplifiers are ideal for 3G/4G wireless infrastructure applications including base transceiver stations, repeaters, boosters, tower- mounted amplifiers (TMAs), remote radio heads, defence/aerospace and other wireless systems requiring high linearity and gain with low power consumption.


Cree ships over 10 million Watts of RF transistors and MMIC PAs


The firm has reached a milestone in shipments of its GaN-on-SiC commercial RF power transistors and high power MMIC amplifiers.


Cree, announces that, as of April 2011, the company’s RF business unit has shipped commercial GaN-on-SiC RF power transistor and MMIC products with more than 10,000,000 watts of combined RF output power.


This milestone demonstrates the consistency, reliability and proven performance of Cree’s GaN HEMT and GaN MMIC technology. The 10 million watt figure includes only commercial RF products and excludes an additional 1.5 million watts shipped for GaN MMIC foundry services.


Cree attained this milestone while maintaining a remarkable failure-in-time rate (FIT rate) of less than 10-per-billion device hours, which is up to 80% lower than the typical FIT rates for other RF power transistor technologies.


“We have achieved more than 1.4 billion total hours of field operation for our GaN-on-SiC devices, coupled with reliability that surpasses other high voltage silicon or GaAs technologies. This is the largest known body of fielded data accumulated by any domestic GaN supplier to date and includes not


only discrete transistors but complex multi-stage GaN MMICs as well. The 10 million watt milestone is a testament to the rapid adoption of our GaN technology—not only for military applications, but for telecom base stations, wide band test equipment, civil radar and medical applications as well. If our expansion into these new market segments continues at the current rate, we have the potential to double the 10 million watt milestone by the end of calendar 2011,” explained Jim Milligan, Cree, director of RF.


As one of the largest U.S. producer of GaN-on- SiC RF wafer processing technology, Cree has developed a comprehensive range of GaN HEMTs and GaN MMICs designed to enable broadband, high efficiency and reliable performance across an increasing array of RF and microwave applications.


Cree has a 25-year history of bringing creative, ground-breaking innovations to the semiconductor industry and has always been at the forefront of technology – from the earliest days of blue LEDs, to the design of the world’s first SiC MOSFET and the creation of the world’s first GaN-on-SiC MMIC.


Co-founder of GaAs Labs and Chairman of M/A-COM to join RFaxis Board


Respected semiconductor executive and financier John Ocampo has joined the RFaxis Board of Advisors.


RFaxis, a fabless semiconductor company focused on innovative, next-generation RF solutions for the wireless connectivity and cellular mobility markets, has announced that John Ocampo, co-founder and President of GaAs Labs LLC and Chairman of M/A- COM Technology Solutions, will join RFaxis’ Board of Advisors.


“John is a well-respected semiconductor operations & technology executive and financier who brings to RFaxis a wealth of advisory experience in increasing growth trajectory, profitability and market leadership,” said Mike Neshat, chairman and CEO of RFaxis. “As a private equity investor, John is very savvy with respect to business development, and he has a proven track record of success in driving


October 2011 www.compoundsemiconductor.net 119


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