Telecoms ♦ news digest
filtering, baluns and other components - all in an compact 4 x 4mm package.
TriQuint says its integrated WLAN solutions take up less PCB space for mobile device manufacturers, while providing several performance advantages over competitive technologies. With an increased operating range, it offers better amplification of weak signals and extends wireless connectivity over greater distances; it offers as much as 2dB higher power output than the previous generation device. The TQP6M9017 also offers extended battery life and faster connectivity ; rapid data transfers enable faster downloads, providing a more enjoyable consumer experience for video streaming and other data-intensive applications.
TriQuint has shipped nearly 300 million Wi-Fi modules since 2009, and nearly doubled its WLAN revenues from 2010 to 2011.
Volume production of the dual-band component is planned next month.
RFMD updates design kits for Agilent’s ADS 2011 software
The enhanced PDKs are immediately available to current and prospective RFMD Foundry Services customers for the firm’s gallium nitride and gallium arsenide process technologies
RF Micro Devices has announced that its Foundry Services business unit has updated its process design kits (PDKs) for use with Agilent Technologies’ recently released Advanced Design System (ADS) 2011 EDA software.
The RFMD PDKs support a complete ADS front- to back-end MMIC design flow with scalable devices, a native design rule checker, and the layout capabilities in ADS 2011. The PDKs work seamlessly with ADS 2011, ADS 2009 Update 1 and ADS 2008 Update 2, enabling RFMD Foundry Services customers to take full advantage of the significant performance advantages of ADS 2011.
RFMD’s GaN and GaAs process technologies are available to Foundry Services customers, supported by RFMD’s industry-leading cycle times. RFMD’s foundry offerings include GaN1 (GaN for high
power), a 0.5µmGaN-on-SiC process technology enabling 65V CW operation and optimised for maximum performance at 4 GHz and below.
RFMD’s GaN1 power technology provides a high breakdown voltage above 400V, while RFMD’s GaN2 is a 0.5 µmGaN-on-SiC process technology offering high linearity for high performance communications systems. Both GaN technologies are manufactured in RFMD’s Greensboro, NC, fab, one of the world’s largest III-V fabs.
The Grensboro fab also manufactures HBT8D, RFMD’s high-volume rugged InGap technology for handset and mixed signal applications, and IPC3, an integrated passive component technology that complements RFMD’s GaN technology portfolio with high power compatibility.
Additional RFMD foundry offerings include FD25, a low noise, 0.25 µmGaAs pHEMT technology, and FD30, a high power 0.3 µm GaAs pHEMT technology, both of which support applications up through 25 GHz. RFMD’s technology portfolio also includes FET1H, a 0.6-micron GaAs pHEMT technology, and FET2D, a 0.6 µm GaAs E/D pHEMT technology. Each of RFMD’s pHEMT technologies is manufactured in the Company’s Newton Aycliffe, UK, fab.
Tom Joseph, manager of technology in RFMD’s Foundry Services business unit, says, “The ADS 2011 release provides RFMD Foundry customers access to Agilent’s latest multi-technology platform for our GaN and GaAs process technologies. By leveraging Agilent’s new Library architecture and simulation enhancements, RFMD’s foundry customers can improve their design efficiencies and reduce time-to-market for their end market products.”
“We are very happy that our mutual customers can now leverage the ADS 2011 product enhancements in RFMD’s GaN and GaAs technologies,” adds Juergen Hartung, foundry program manager of Agilent’s EEs of EDA organisation.
“With these PDKs, our customers can now enjoy the industry’s most comprehensive multi-technology design platform using Momentum, the industry- leading 3-D planar EM simulator, our integrated full 3-D FEM engine, the industry-proven design- for-manufacturing capabilities inside ADS, and an
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