LEDs ♦ news digest
microstructure and physical properties. He has worked extensively on the materials science of GaN and related alloys, and has consistently been lauded for his research.
Among his honours, Speck received the Quantum Device Award from the International Symposium on Compound Semiconductors in 2007. In 2010, he received the IEEE Photonics Society Aron Kressel Award for his work on nonpolar and semipolar GaN- based materials and devices.
“Jim Speck is the world’s leading expert in gallium nitride materials and crystal growth,” concludes Steven DenBaars, co-director of SSLEC, a professor of materials, and of electrical and computer engineering, as well as the Mitsubishi Chemical Professor in Solid State Lighting & Display. “SSLEC is very fortunate to have him.”
Gaas Labs acquires GaN RF innovator Nitronex
With this move, Nitronex hopes to expand its market presence in the rapidly growing, high performance, GaN RF power device market using its gallium nitride on silicon technology
Gaas Labs, LLC, a private investment fund targeting the communications semiconductor market, has acquired privately-held Nitronex Corporation.
Nitronex designs and manufactures GaN based RF solutions for high performance applications in the defence, communications, cable TV, and industrial & scientific markets.
Founded in 1999 and headquartered in Durham, North Carolina, Nitronex provides high-performance GaN-on-Silicon semiconductor solutions using its proprietary SIGANTIC manufacturing process.
The Nitronex process combines the superior power, efficiency and bandwidth performance of GaN with the reliability, ease of use and low-cost advantages of industry standard silicon substrates. Financial terms of the transaction were not disclosed.
“We are excited to add Nitronex, a leading innovator in GaN-based RF solutions, to our portfolio of RF
semiconductor companies,” says John Ocampo, Co-Founder and President of Gaas Labs. We look forward to helping Nitronex further leverage its products and technologies and extend its RF market leadership.”
Charles Shalvoy, CEO of Nitronex comments on the acquisition, “John Ocampo and Gaas Labs have demonstrated their ability to build and develop companies that realise their full growth potential. Partnering with Gaas Labs is an important milestone for Nitronex, which will enable us to deliver greater value to our customers in the rapidly growing, high performance, GaN RF power device market. We are thrilled to continue advancing our GaN-on-Silicon technology and expanding our market presence with Gaas Labs’ backing and the aid of their strategic and operational expertise.”
Toshiba unveils Ka-band high power GaN MMIC for SATCOM
The gallium nitride device is suited to applications such as high definition video broadcast and broadband data communication
Toshiba America Electronic Components, Inc. (TAEC), a company that collaborates with technology companies to create breakthrough designs, has unveiled a Ka-Band High Power GaN microwave monolithic integrated circuit (MMIC) featuring one of the highest power and efficiency performances in its class. Toshiba is planning to release a complete family of Ka-Band products to support SATCOM applications. Ka-Band SATCOM has been on the rise, and is continuing to show steady growth to support broadband communication and increasing demand for higher bandwidth in SATCOM frequencies. Due to the limited availability of high power microwave Solid- State devices, replacing tube-base amplifiers with Solid-State Power Amplifiers for Ka-Band has not been a cost-effective design option. Toshiba’s new Ka-Band MMIC will provide a solution to support the anticipated surge of solid-state amplifiers to the millimetre wave frequency range for SATCOM applications. “As a longtime supplier of high- performance GaN and gallium arsenide microwave devices for wireless applications in various
July 2012
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