news digest ♦ LEDs
frequency bands, Toshiba plans to continue efforts to expand the product line with new solutions,” says Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete Business Unit. A datasheet for Toshiba’s new MMIC will be available in Q4 2012, with sampling beginning Q1 2013.
Hybrid GaN IC for X-band revealed by Toshiba
The gallium nitride HIC is optimised for high gain and high powerand is suited to AESA, and PESA radar applications
Toshiba America Electronic Components, Inc. (TAEC) is introducing a new GaN hybrid IC (HIC), which is optimised for high gain and power.
Available in small hermetically-sealed packages, the gain-enhanced HIC is targeted to transmitter and receiver modules (TRMs) used in radar applications - such as active electronically scanned array (AESA) and passive electronically scanned array (PESA).
The new X-Band hybrid IC, the TGM9398-25, operates in the 9.3 to 9.8 GHz range, and has output power at 1dB of 25W, or 44.0dBm (typ.), linear gain of 25dB (typ.) and power added efficiency of 35 percent.
Toshiba commercially launched the 50W discrete GaN internally-matched HEMT for the band, the TGI8596-50, in 2008 and the TGI0910-50, in 2010. The new device is in a package that is footprint- compatible with the existing discrete internally- matched GaN HEMT, to support easy upgrades for legacy designs.
“The high power density of GaN technology makes this possible,” says Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete Business Unit. “With the energy- saving features associated with higher gain, this hybrid IC will help our customers design more advanced telecommunication systems.”
Samples of Toshiba’s GaN hybrid IC will be available in Q4 2012.
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www.compoundsemiconductor.net July 2012
GaN HEMT incorporated in the first ever single-chip transceiver
The 10 GHz gallium nitride device reduces chip footprint by over 90%, enabling more compact radars and wireless communications equipment
Fujitsu Laboratories has announced that it has successfully developed the world’s first single- chip transceiver using GaN high electron mobility transistor (HEMT) technology that features an output of 6.3 W and that operates at a frequency of 10 GHz. In order to simultaneously handle strong transmission signals and weak incoming signals in the same chip, you need to efficiently switch between outgoing and incoming signals, while reducing the impact that outgoing signals have on incoming signals. However, until now, it has been difficult to accomplish both of these objectives in tandem.
Fujitsu Labs has resolved this issue by developing a duplexer with low signal loss using a GaN- HEMT, and through high-output circuit integration design technology that controls signal interference between the outgoing and incoming signals. The result is a transceiver chip with a footprint that is less than 10% of the size of the multiple chips that have been needed until now. With this technology, it is now possible to configure a high-output transceiver using just one chip, enabling systems such as radar equipment and wireless communications equipment to be made more compact. Details of this technology were presented at the IEEE MTT International Microwave Symposium (IMS 2012) held in Montreal. GaN is used as a material in blue LEDs. Compared to the conventional semiconductor materials of silicon and GaAs, GaN features a high electron transfer rate and a relatively high breakdown voltage. Given these characteristics, GaN HEMTs, or field-effect transistors that use GaN, show promise for high- output, exceptionally efficient operations. They are ideally suited to a wide range of core technologies for IT applications, including satellite transceivers, mobile phones, GPS-based navigations systems, and broadband wireless networking systems.
Background In line with the advancement of a network-based
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