news digest ♦ RF Electronics low-noise amplifiers (LNAs).


currently available and production is expected in September 2012.


New high-performance GaAs PAs from RFMD


The new devices are based on the company’s GaAs E-pHEMT process and include the TQP3M9036 that operates from 400 to 1500 MHz with a noise figure of 0.45dB and the TQP3M9037 that operates from 1500 to 2700MHz with a noise figure of 0.40dB.


Both are well suited for infrastructure applications such as cellular base stations, tower-mounted amplifiers (TMAs), small cell wireless networks, repeaters, 700MHz LTE networks, and emerging wireless systems using “white spaces” in the UHF spectrum.


TriQuint’s new solutions simplify RF design by integrating key functions on-chip and within the package that are typically performed by external components. They also address the growing TDD- LTE market with integrated digital shut-down biasing capability and can deliver high performance from bias voltages of +3 V to +5 V without a negative supply voltage.


The biasing network maintains stability over temperature through a current mirror and resistive feedback; it also provides the switching circuit for the digital power-down function. TriQuint’s new LNAs have been optimally configured on-chip to provide the best combination noise figure, linearity and reliability.


Both of TriQuint’s new devices are pin-compatible with similar products in the TriQuint portfolio and are housed in industry-standard, RoHS-compliant 2 x 2mm, 8-lead DFN packages. They are very rugged and can block high-power interfering input signals or transmit power leakages greater than +22dBm. The devices are also unconditionally stable to eliminate potential oscillations. The TQP3M9036 and TQP3M9037 are internally matched to 50Ω and do not require any external matching circuitry for operation.


Initial samples of TQP3M9036 and TQP3M9037 are 106 www.compoundsemiconductor.net July 2012


By delivering exceptional power output, linearity and gain, RFMD’s RFPA1002, RFPA1003, and RFPA1702 help to satisfy the increasing capacity and performance requirements of next-generation point-to-point radio systems.


All the high-frequency GaAs PAs are packaged in a 6x6 mm QFN, combining low-cost packaging with excellent electrical performance.


In addition to the point-to-point radio market, the RFPA1002, RFPA1003, and RFPA1702 are ideally suited for satellite communications, military radar, and electronic warfare applications. RFMD’s expanding portfolio of microwave radio chipsets also includes upconverters, downconverters, VCOs, and gain blocks.


Samples and production quantities are available now through RFMD’s online store or through local


The devices expand the company’s portfolio of radio chipsets targeting cellular backhaul and other markets and rely on the firm’s gallium arsenide pHEMT technology


RF Micro Devices is introducing three new power amplifiers for high-frequency point-to-point radio applications.


The RFPA1002, RFPA1003, and RFPA1702 deliver over1W RF output power in the 10GHz to 20GHz frequency bands.


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