news digest ♦ Telecoms
These technologies were integrated into a single prototype chip that combines a duplexer, a transmitting amplifier, and a receiving amplifier (Figure 4). The chip operates at 6.3 W in the 10- GHz band and measures 3.6 × 3.3 mm, less than one-tenth the size of earlier multi-chip systems.
Figure 4: Photo and diagram of the newly developed GaN transceiver chip
The result shows that these technologies make it possible to design a high-output transceiver around a single chip, with applications in radar and broadband communications, promising smaller, lighter systems. In the future, Fujitsu Labs intends for this technology to be put to use in a wide range of applications that require compact modules with high output, including wireless communications and radar systems.
New high-performance GaAs PAs from RFMD
The devices expand the company’s portfolio of radio chipsets targeting cellular backhaul and other markets and rely on the firm’s gallium arsenide pHEMT technology
RF Micro Devices is introducing three new power amplifiers for high-frequency point-to-point radio applications.
The RFPA1002, RFPA1003, and RFPA1702 deliver over1W RF output power in the 10GHz to 20GHz frequency bands.
By delivering exceptional power output, linearity and gain, RFMD’s RFPA1002, RFPA1003, and RFPA1702 help to satisfy the increasing capacity and performance requirements of next-generation point-to-point radio systems.
All the high-frequency GaAs PAs are packaged in a 6x6 mm QFN, combining low-cost packaging with excellent electrical performance.
In addition to the point-to-point radio market, the RFPA1002, RFPA1003, and RFPA1702 are ideally suited for satellite communications, military radar, and electronic warfare applications. RFMD’s expanding portfolio of microwave radio chipsets also includes upconverters, downconverters, VCOs, and gain blocks.
Samples and production quantities are available now through RFMD’s online store or through local RFMD sales channels.
Toshiba’s new C-band GaAs FET PAs target microwave applications
The improved gain of the new gallium arsenide devices will help microwave designers reduce the number of parts in their overall system
Toshiba America Electronic Components (TAEC) has expanded its GaAs field effect transistor (FET) line-up with two new devices optimised for power efficiency.
The new power added efficiency enhanced GaAs FETs are targeted to microwave radios and block up
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www.compoundsemiconductor.net July 2012
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