LEDs ♦ news digest
Several ARC customers have already announced that their CHES sapphire has been qualified by multiple LED manufacturers.
ARC Energy’s CHES furnaces are unique in several ways. One key advantage is dramatically higher material utilization due to sapphire growth on the c-plane. This approach produces large diameter substrates at a significantly lower cost.
Greater than 75% material utilisation can be achieved using c-plane ARC Energy CHES furnaces while other methods are limited to less than 35%. CHES furnaces are also highly automated—a key feature which brings operator costs down and provides consistent output.
CHES furnaces are designed to produce higher performance sapphire at larger wafer sizes compared to older technologies. A CHES furnace produces high-yield sapphire up to 10” diameter, providing higher efficiency downstream in the LED manufacturing process and upstream as c-plane growth significantly reduces waste.
The study results show CHES-grown sapphire is capable of production-level performance. As the HB-LED market expands, CHES gives sapphire growers significant advantages, including higher yield, a scalable technology, and better LED chip performance. ARC Energy offers CHES furnaces and a variety of support services for crystal growth companies seeking to lead in the HB-LED industry
LED MOCVD tools to experience turbulent investment cycles
In the coming years, lithography, plasma etching, PECVD & PVD tools will also experience an upheaval
According to the report, “LED Front-End Manufacturing”, by Yole Développement,to be published on 16th July, the packaged LED market still presents significant opportunities for growth in the next 5 years, but is expected to saturate in value by the end of the decade.
Driven by MOCVD reactors, the equipment market July 2012
www.compoundsemiconductor.net 55
experienced an unprecedented investment cycle in the 2010-2011 period. The cycle was driven by demand in LCD backlight displays, anticipation of the general lighting market and generous subsidies offered by the Chinese central and local governments in a bid to stimulate the domestic chip production and create world leading chip companies.
This has resulted in a significant overcapacity situation that will take 12 to 18 months to absorb. The next investment cycle driven by lighting applications will start in 2013 and will be more limited in value than the previous cycle due to improvements in equipment throughput and yields. The MOCVD equipment market is anticipated to represent a $4.3 billion opportunity in the 2012- 2017 period.
Together, lithography, plasma etching, PECVD and PVD tools represent a $650 million opportunity and will essentially follow a similar trend with some exceptions.
The market for dry etching tools is still growing in 2012 due to increasing adoption for PSS (Patterned Sapphire Substrate). The market for most lithography tools will however decrease as the industry transitions to larger diameter substrates and the number of wafer starts initially increases moderately but starts decreasing in 2015.
PVD equipment will also experience moderate growth during the next investment cycle. E-beam evaporators have turned into commodities, with systems available from dozens of vendors at very low cost. But opportunities exist in promoting sputtering for ITO deposition and sputtering could also gain some traction in metal deposition if the industry adopts large diameter wafers and moves from batch to single wafer processing. Sputtering equipment could then offer improved cost of ownership.
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