news digest ♦ Equipment and Materials
complete on-wafer production solution to address the test challenges of discrete power devices.
As power semiconductors grow with the demand for energy-efficient and environmentally-friendly products, power device manufacturing will shift from silicon substrates to SiC, GaN, and GaN-on silicon These new substrate technologies offer improved efficiency and enable higher levels of power, and faster switching, in many applications using insulated gate bipolar transistors (IGBTs) and MOSFETS, such as automotive and consumer electronics, electrical power distribution and large data centres.
Fast-growing applications in renewable energy and industrial power will challenge power device manufacturers to develop more efficient devices at a lower cost, driving the need for test solutions specifically designed for high-voltage and high- current probing.
This latest addition meets this challenge and is claimed to be the first fully-automatic on-wafer probe system for high-power device measurement. Rated up to 10k V/400 A, the APS200TESLA delivers excellent electrical performance for high- voltage and high-current device characterisation at production levels.
The system comes with a high-voltage, high-current probe card, a high-voltage, high-power chuck port, and the patent-pending MicroVac high-power chuck that can handle wafer thicknesses down to 50 µm, such as ultra-thin Taiko wafers.
An optimised electrical connection easily integrates the APS200TESLA with a variety of test instruments, and the interlock-enabled safety shield provides a safe environment for the operator. The arc-suppression feature allows the customer to optimise device layout to achieve better yields.
Auto-discharging and the unique probe-pin touch sensing capability prevent device damage due to high-voltage discharge during die-to-die moves. The APS200TESLA also offers advanced prober control software for automatic wafer and die stepping.
“The new APS200TESLA leverages our experience in achieving accurate on-wafer measurement. It is an advanced, turn-key power device measurement system that will help our customers improve cost-
182
www.compoundsemiconductor.net July 2012
of-ownership, increasing test throughput and improving yields,” comments Michael Burger, president and CEO, Cascade Microtech, Inc.
“It allows our customers to save time by avoiding unnecessary dicing and packaging prior to final test. By testing on-wafer in a production environment, the APS200TESLA enables our customers to reduce test costs and get their products to market faster.”
JENOPTIK expands high power laser production with MOCVD AIXTRON system
AIXTRON SE today announced a new MOCVD systems order from existing customer JENOPTIK Diode Lab GmbH in Germany.
The contract is for one AIX 2600G3 ICMOCVD reactorin a 12x4-inch wafer configuration to form the basis of a new capacity expansion for high power semiconductor laser diode epitaxial materials at JENOPTIK’s Lasers & Material Processing Division.
The order was placed in the fourth quarter of 2011 and delivery will take place in the second half of 2012. AIXTRON Europe support team will install and commission the new reactor in JENOPTIK’s brand new dedicated production facility in Berlin- Adlershof.
A spokesman from JENOPTIK Diode Lab GmbH comments, “Due to increasing demand as a result of high levels of customer satisfaction, particularly from Asia, it is likely that our existing production facility in Berlin will soon reach the limits of its capacity, and it is therefore being expanded. As the new facility will more than double our production capacities, we need to introduce more MOCVD capability. AIXTRON equipment has served us very well, and we now wish to bring in the AIX 2600G3 ICMOCVD reactor in order to better respond to high levels of customer satisfaction and demand. The quality of technology and the efficiency of service we receive from AIXTRON are second to none. Having them working closely with us will guarantee the success of our expansion plans.”
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186