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Revolutionising displays with indium, gallium and zinc oxide technology
A new material should enable even higher resolutions, lower power consumption, and higher performance touch screens, as well as narrower bezel widths for LCD display panels used in mobile devices such as smartphones
AFG25HW355S schematic
Freescale’s first GaN product, the AFG25HW355S device, is the latest addition to its power amplifier portfolio. Current Freescale RF power offerings include 12V, 28V and 50V silicon LDMOS products, 5V GaAs HBT, 5V and 12V GaAs pHEMT solutions, and high-frequency SiGe technology featuring operation up to 100 GHz and beyond.
“Freescale’s GaN RF power solutions underscore our technology-agnostic approach to the RF power market,” says Ritu Favre, vice president and general manager of Freescale’s RF Division. “Working with GaN in development since the mid- 2000s, we have established an ideal blend of cost- efficiency, performance and reliability, and the time is now right to add GaN-based products to our broad array of RF power amplifier solutions.”
The AFG25HW355S is a 350W, high-performance- in-package, 2:1 asymmetric device operating between 2.3 GHz and 2.7 GHz. With 56 dBm peak power and 50 percent efficiency, the device has a gain of 16 dB and comes in NI-780 packaging.
Advantages of using GaN technology in power amplifiers include smaller product form factors, low parasitic loss, elevated power density and higher-frequency operation. Potential GaN cellular applications include quasi-linear, high efficiency (Doherty), high-powered pulsed (non-linear) applications, broadband PAs and switch-mode amplifier configurations.
The AFG25HW355S will be available soon to select customers in sample quantities, with full qualification and volume shipping planned by Q2 2013.
Sharp Corporation and Semiconductor Energy Laboratory (SEL) have jointly developed a new oxide semiconductor (IGZO) technology with high crystallinity.
This jointly developed new IGZO technology imparts crystallinity in an oxide semiconductor composed of indium, gallium and zinc. Compared to current amorphous IGZO semiconductors, Sharp says this new material enables even smaller thin- film transistors to be achieved and provides higher performance.
Sharp believes that IGZO will be adopted for use in LCD displays for mobile devices such as smartphones where the trend toward higher screen resolutions is growing increasingly strong. What’s more, it can also be adapted for use in organic EL displays which hold out high expectations for the future.
Although challenges to commercialisation remain in terms of both service life and production, the two companies will continue to push ahead with R&D in anticipation of future market needs.
Aiming towards early commercialisation in LCD displays using this new IGZO technology, the two companies will also be pursuing R&D to expand the use of this material in non-display devices and to develop applications other than displays in the future.
The LCD display will have a screen size of 4.9 inch by 6.1 inch and a pixel resolution of 720 x 1280 and 2560 x 1600. The pixel density will be 302 ppi and 498 ppi. Envisioned applications include mobile devices, in particular smartphones.
During the development of the oxide semiconductor, Sharp and SEL found a new crystalline structure
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www.compoundsemiconductor.net July 2012
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