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Figure 4: Photo and diagram of the newly developed GaN transceiver chip
The result shows that these technologies make it possible to design a high-output transceiver around a single chip, with applications in radar and broadband communications, promising smaller, lighter systems. In the future, Fujitsu Labs intends for this technology to be put to use in a wide range of applications that require compact modules with high output, including wireless communications and radar systems.
New Freescale GaAs RF power device raises the performance bar
The MMDS25254H 2300-2700 MHz device employs a gallium arsenide MMIC and indium gallium phosphide HBT technology
Freescale Semiconductor has introduced new Airfast transistors engineered to boost the efficiency, peak power and signal bandwidth of next-generation base stations.
With the new offerings, Freescale’s flagship Airfast RF power product line now includes at least one solution for each cellular band and supports both small and large cell base station deployments.
The cost-effective, small-configuration Airfast RF power solutions are designed to help network equipment manufacturers and operators support multiple wireless standards, manage escalating data transmission rates and keep capital and operating costs low.
To complement the new Airfast devices, Freescale is also announcing a new class of control products called advanced Doherty alignment modules (ADAM) that enables real-time adjustment of phase and amplitude for the optimisation of traditional Doherty power amplifiers. The modules are designed to work with Airfast devices to boost overall system performance, including increased power efficiency, output power and linearity across the frequency band.
The firm has released a number of LDMOS 152
www.compoundsemiconductor.net July 2012 solutions.
Another module, the MMDS25254H ADAM, is a new class of highly integrated GaAs MMIC control circuits designed specifically to optimise the performance of today’s Doherty amplifiers. ADAM provides the ability to align and optimise the RF performance in the carrier and peaking paths of a Doherty amplifier thus providing improved overall BTS performance. The 2300-2700 MHz device also employs E-pHEMT and InGaP HBT technology.
When combined with Airfast power transistors, this sophisticated technology provides increased manufacturing yields and power added efficiency. Available for frequency bands spanning 700 MHz to 2800 MHz. Product families for 700-1000 MHz and 1800-2200 MHz are also in development.
The RoHS compliant device is manufactured in a cost-effective industry standard QFN 6x6 mm package. It also has digital control of amplitude and a phase and constant 90 degree phase offset between port 2 and port 3 versus frequency (500 MHz bandwidth). Freescale also says it displays excellent over temperature amplitude and phase performance and digital adjustment precision and excellent repeatability.
RFMD flexes its muscles with new GaN transistors for pulsed-radar
The gallium nitride matched power device extends range, reduce size and weight, and improves overall ruggedness in new and existing radar designs
RF Micro Devices has just released a highly- efficient 280 W pulsed GaN RF matched power transistor, the RFHA1025.
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