LEDs ♦ news digest
RF and microwave. “This integrated front-to-back design system provides highly accurate, scalable nonlinear models, parametric layout cells, design rule checking, seamless layout interoperability and a streamlined design cycle to help accelerate time-to-market for our customers.” “With the joint release of this PDK, our mutual customers now have access to Cree’s proven GaN-on-SiC MMIC process technology, along with the Agilent integrated design system, which is uniquely suited to producing reliable, leading edge, high- power HEMT devices for today’s most challenging applications,” comments Juergen Hartung, foundry program manager, Agilent EEsof EDA.
Copper laminate packages for high power III-V devices unveiled
The new copper-moly-copper packages dissipate heat in gallium nitride, gallium arsenide and silicon carbide power devices
StratEdge Corporation is introducing a new family of high power laminate packages.
and a GaN chip.
The LL802302 is 0.8” (20.32mm) long x 0.39” (9.91mm) wide with 2 leads and a raised lid with an epoxy seal. This is a flange package with a bolt hole on each end so the package can be bolted to the printed circuit board.
The LL362302 is a flangeless, fully hermetic version of the LL802302 package, and has a flat ceramic lid. StratEdge offers both flange and flangeless styles to accommodate manufacturing processes to either bolt down or solder the package. Hermeticity is especially critical in aerospace and defense applications.
“StratEdge’s new laminate power packages solve thermal problems encountered when using GaN devices,” explains Tim Going, StratEdge president. “The excellent thermal conductivity of the CMC base enables use of GaN devices in high power applications, and the flange package facilitates manufacturing. StratEdge is continuing to develop packages to handle the requirements of today’s new materials and devices.”
Freescale breaks into GaN power RF market
Suitable for cellular infrastructure applications, the RF power innovator adds the efficiency, performance and bandwidth advantages of gallium nitride technology to its portfolio
Freescale Semiconductor has revealed its first RF power amplifier product built using GaN technology.
The LL family of leaded laminate copper-moly- copper (CMC) base packages dissipates heat from high power compound semiconductor devices, such as those based on GaN, GaAs and SiC. These packages handle applications through 6 GHz for use in RF radios for communications, radar, and high power millimetre-wave signals.
The series includes two laminate power packages, both with a ratio of 1:3:1 CMC, which provides a good thermal match for alumina-based materials
July 2012
www.compoundsemiconductor.net 157
The company’s RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.
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