Telecoms ♦ news digest
nonlinear materials such as orientation-patterned gallium arsenide and zinc germanium diphosphide.
Partners in the project are M Squared Lasers Ltd , based in Glasgow, who will lead the project. Other collaborators include Solus Technologies Ltd and the Institute of Photonics based in the University of Strathclyde.
Project title: PEARGaN - Power Electronics Applications for Reliability in GaN
Project outline: GaN-on-Silicon is a hot topic at the moment. One of its applications is in discrete devices for high-voltage power electronics applications, with the potential to deliver superior performance in breakdown voltage, on-state resistance and higher switching speeds. This material system also promises to reduce system losses and enable greater levels of efficiency at lower cost than current solutions.
The PEARGaN project has assembled a consortium of world class partners from UK industry and academia, to develop new system level concepts and circuit architectures, evaluate advanced manufacturing process technologies and create device demonstrators to fully understand the device behaviour and failure mechanisms, proving that these devices are robust and can deliver the required levels of life-time reliability that is demanded by the early adopters in a broad range of power management and control applications.
The lead partner is NXP Semiconductors UK Ltd based in Stockport. Also involved in the project are IQE (Europe) Ltd, Bristol University – Device Reliability Centre, Manchester University – Power Conversion Group and Liverpool University – Materials & Structures Centre.
The offer of funding to these projects is conditional and remains subject to the successful completion of Technology Strategy Board, Scottish Enterprise and BBSRC compliance and financial review processes.
Cree’s GaN HEMT is a game changer in radar and satellite communications
The firm’s four new gallium nitride devices are suited to the X-Band and come in fully matched 50W or 100W packages
Cree has released a range of high- efficiency X-Band, fully matched GaN HEMT transistors for commercial radar and satellite communications applications.
Rated at 50W and 100W, these new GaN devices are claimed to deliver “game- changing” efficiency and performance improvements when compared to existing GaAs MESFET transistors or Travelling Wave Tube (TWT) based amplifiers.
“The new Cree X-Band GaN HEMT product family represents disruptive technology that we believe will set new standards of efficiency and performance for high-frequency, high-power applications such as satellite communications and X-Band commercial radar,” explains Jim Milligan, director, RF and microwave.
“The performance advantages of higher power ratings, higher linear efficiency and higher gain, combined with a reduced footprint, offer dramatic advantages when compared to GaAs MESFET transistors or TWT amplifiers. We believe this new product family will deliver comprehensive system benefits, including superior thermal management and significantly-reduced power supply loads. The new product family also offers a lower cost alternative to TWT amplifiers and associated high- voltage power supplies and linearisation systems while improving overall system reliability.”
The X-Band product family consists of four new GaN HEMT transistors; two for satellite communications (CGHV96050F1 and CGH96100F1) and two for commercial radar applications (CGHV96050F2 and CGHV96100F2). All four transistors are offered in a compact footprint of 0.9 x 0.7” package.
Product
Output Power @ VDD=40V Frequency
July 2012
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