news digest ♦ RF Electronics deployed in CATV / FTTH networks worldwide


typical and 37dB maximum gain; 18dB return loss; 8 to + 1dBm optical input range; 20dBmV RF output; 6 x 6mm leadless SMT package.


Samples will be available from July 27th, 2012. . TAT6281


TriQuint’s new TAT2814A satisfies the DOCSIS 3.0 specification with more than 4dB (typical) margin. By integrating two stages of amplification and a variable gain attenuator, TriQuint says its TAT2814A can greatly simplify CATV RF design by reducing the number of discrete RF components. According to the company, other solutions require up to five-times the PCB space to deliver DOCSIS 3.0 performance while consuming up to twice the electrical power. TriQuint’s new product solution is ideal for DOCSIS 3.0 output stage amplifier designs including Edge QAM and CMTS (cable modem termination system) applications. The TAT2814A is also ideally suited for Ethernet over Coax (EOC) supporting DOCSIS 3.0 PA levels.


RFMD to outsource MBE and MOCVD wafer manufacturing


The transfer of RFMD’s MBE growth facility to IQE should cut manufacturing costs


As previously announced, RF Micro Devices has entered into a definitive agreement to transfer its MBE wafer growth facility in Greensboro, North Carolina, to IQE.


RFMD’s MBE growth facility supplies MBE wafer starting material to its wafer manufacturing facilities. The firm will continue to own and operate in Greensboro, and Newton Aycliffe, UK.


RFMD’s GaAs semiconductor products incorporate transistor layers grown using either an MBE or MOCVD process. RFMD outsources all MOCVD- based starting material, and will now also begin to outsource MBE-based starting material with the completion of the transfer.


Now, RFMD has announced that IQE will supply RFMD with both MBE- and MOCVD-based starting materials.


TAT2814A


TAT2814A 45-1003 MHz; fully integrated two stage amplifier with variable gain attenuator; meets DOCSIS 3.0 with +4dB typical performance margin; < 5W nominal power consumption; low-reflection differential input/output stages; 30dB typical max gain; 4.5 typical noise figure; 6x6mm leadless SMT package.


Samples are now available.


TAT6281 45 to 1003 MHz variable gain receiver; 8dB pA/rtHz typical EIN; 5V @ 220 mA bias supply; 20dB PIN diode variable gain attenuator; 18dB


114 www.compoundsemiconductor.net July 2012


The transfer and supply agreement will lower RFMD’s manufacturing costs, beginning in the September 2012 quarter. In the June 2012 quarter, RFMD currently estimates the transaction will result in a non-cash GAAP charge of approximately $0.02 to $0.03 related to equipment and inventory write- offs and will be approximately neutral to non-GAAP operating results.


Bob Bruggeworth, president and CEO of RFMD, states, “We believe this is a mutually beneficial transaction for both RFMD and IQE. Of note, we expect this transaction will provide RFMD with lower MBE and MOCVD pricing, higher return on invested capital (ROIC), and more predictable operating results.”


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