RF Electronics ♦ news digest data rate applications.


The RFFM8200/8202 (2.5GHz) and RFFM8500/8502 (5GHz) FEMs integrate the power amplifier, LNA, and switch functionality into a single plastic QFN package. Designed for both “chip on board” and “system-in-package” (SiP) implementations, both product families deliver best-in-class linear output power while operating over a wide range of operating voltages. The highly integrated FEMs significantly reduce external component count outside the core WiFi chipset.


Samples and production quantities are available now through RFMD’s online store or through local RFMD sales channels.


TriQuint unleashes new GaN products on the defence & commercial markets


The new gallium nitride solutions are claimed to increase RF performance and enable smaller circuits, as well as better-performing low voltage and high power systems


TriQuint Semiconductor released four new GaN devices at the IMS / MTT-S Symposium in Montreal, Canada. TriQuint says its GaN solutions improve RF efficiency, reduce overall costs and enhance system ruggedness.


RF designers attending IMS / MTT-S can access public forums where TriQuint will explore high performance GaN capabilities and ways this technology can enable smaller circuits, as well as better-performing low voltage and high power systems. GaN-based integrated circuits outperform silicon, gallium arsenide and other semiconductor technologies. GaN devices are also seen by the industry as key to future ‘green’ RF and DC-DC power solutions that can reduce network electrical consumption, enable greater range in electric vehicles or extend smartphone battery life.


“TriQuint is advancing state-of-the-art high frequency / high power GaN research. Our internal product development programs are creating new commercial and defense lower-voltage devices. Today we are announcing four new GaN products


TriQuint is also announcing the availability of the T1G6003028-FS, a 30W wideband GaN packaged transistor that can cut the number of driver circuits in a typical power amplifier design by 50%.


TriQuint will also be describing its gallium nitride, gallium arsenide, SAW and BAW solutions for networks, defence and aerospace products at IMS / MTT-S 2012 at booth #1815.


First ever 802.11ac Wi-Fi RF module released by TriQuint


The device, suited for next-generation smartphones and tablets, enables greater range and performance for video streaming. It employs the firm’s E/D pHEMT technology which incorporates an indium gallium arsenide active layer


TriQuint Semiconductor has introduced what it says is the industry’s first 802.11ac Wi-Fi RF module for next-generation mobile devices.


July 2012 www.compoundsemiconductor.net 109


enabled by TriQuint’s high performance technology leadership,” says TriQuint Defence Products and Foundry Services Vice President and General Manager, James L. Klein.


TriQuint has also revealed three new GaN power amplifiers that deliver greater efficiency, wideband coverage and excellent performance for communications, defence and civilian radar. These are the TGA2572-FL (14-16 GHz), now available; as well as the TGA2579-FL (14-15.5 GHz) and the TGA2593-GSG (13-15 GHz), which will be available in July.


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