Telecoms ♦ news digest
This award was established to celebrate and recognise the achievements made by service providers and solutions providers in the optical networking industry. Infinera’s award was accepted by Michael Capuano, Infinera’s vice president of corporate marketing.
“We are delighted to see our PIC receive this award,” gushes Capuano. “We believe that our PICs change the dynamics of the optical networking industry by dramatically increasing optical transport network efficiency while reducing total cost of ownership.”
Toshiba unveils Ka-band high power GaN MMIC for SATCOM
The gallium nitride device is suited to applications such as high definition video broadcast and broadband data communication
Toshiba America Electronic Components, Inc. (TAEC), a company that collaborates with technology companies to create breakthrough designs, has unveiled a Ka-Band High Power GaN microwave monolithic integrated circuit (MMIC) featuring one of the highest power and efficiency performances in its class. Toshiba is planning to release a complete family of Ka-Band products to support SATCOM applications. Ka-Band SATCOM has been on the rise, and is continuing to show steady growth to support broadband communication and increasing demand for higher bandwidth in SATCOM frequencies. Due to the limited availability of high power microwave Solid- State devices, replacing tube-base amplifiers with Solid-State Power Amplifiers for Ka-Band has not been a cost-effective design option. Toshiba’s new Ka-Band MMIC will provide a solution to support the anticipated surge of solid-state amplifiers to the millimetre wave frequency range for SATCOM applications. “As a longtime supplier of high- performance GaN and gallium arsenide microwave devices for wireless applications in various frequency bands, Toshiba plans to continue efforts to expand the product line with new solutions,” says Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete Business Unit. A datasheet for Toshiba’s new MMIC will be
available in Q4 2012, with sampling beginning Q1 2013.
Hybrid GaN IC for X-band revealed by Toshiba
The gallium nitride HIC is optimised for high gain and high powerand is suited to AESA, and PESA radar applications
Toshiba America Electronic Components, Inc. (TAEC) is introducing a new GaN hybrid IC (HIC), which is optimised for high gain and power.
Available in small hermetically-sealed packages, the gain-enhanced HIC is targeted to transmitter and receiver modules (TRMs) used in radar applications - such as active electronically scanned array (AESA) and passive electronically scanned array (PESA).
The new X-Band hybrid IC, the TGM9398-25, operates in the 9.3 to 9.8 GHz range, and has output power at 1dB of 25W, or 44.0dBm (typ.), linear gain of 25dB (typ.) and power added efficiency of 35 percent.
Toshiba commercially launched the 50W discrete GaN internally-matched HEMT for the band, the TGI8596-50, in 2008 and the TGI0910-50, in 2010. The new device is in a package that is footprint- compatible with the existing discrete internally- matched GaN HEMT, to support easy upgrades for legacy designs.
“The high power density of GaN technology makes this possible,” says Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete Business Unit. “With the energy- saving features associated with higher gain, this hybrid IC will help our customers design more advanced telecommunication systems.”
Samples of Toshiba’s GaN hybrid IC will be available in Q4 2012.
July 2012
www.compoundsemiconductor.net 83
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186