news digest ♦ Telecoms
TriQuint touts packaged GaAs LNAs for 400 to 2700 MHz
The firm claims the two devices deliver the lowest noise figure of any integrated, packaged solutions for base station and similar applications
TriQuint Semiconductor has announced initial sample availability of two packaged, surface-mount low-noise amplifiers (LNAs).
with similar products in the TriQuint portfolio and are housed in industry-standard, RoHS-compliant 2 x 2mm, 8-lead DFN packages. They are very rugged and can block high-power interfering input signals or transmit power leakages greater than +22dBm. The devices are also unconditionally stable to eliminate potential oscillations. The TQP3M9036 and TQP3M9037 are internally matched to 50Ω and do not require any external matching circuitry for operation.
Initial samples of TQP3M9036 and TQP3M9037 are currently available and production is expected in September 2012.
GaN HEMT incorporated in the first ever single-chip transceiver
The new devices are based on the company’s GaAs E-pHEMT process and include the TQP3M9036 that operates from 400 to 1500 MHz with a noise figure of 0.45dB and the TQP3M9037 that operates from 1500 to 2700MHz with a noise figure of 0.40dB.
Both are well suited for infrastructure applications such as cellular base stations, tower-mounted amplifiers (TMAs), small cell wireless networks, repeaters, 700MHz LTE networks, and emerging wireless systems using “white spaces” in the UHF spectrum.
TriQuint’s new solutions simplify RF design by integrating key functions on-chip and within the package that are typically performed by external components. They also address the growing TDD- LTE market with integrated digital shut-down biasing capability and can deliver high performance from bias voltages of +3 V to +5 V without a negative supply voltage.
The biasing network maintains stability over temperature through a current mirror and resistive feedback; it also provides the switching circuit for the digital power-down function. TriQuint’s new LNAs have been optimally configured on-chip to provide the best combination noise figure, linearity and reliability.
Both of TriQuint’s new devices are pin-compatible 84
www.compoundsemiconductor.net July 2012
The 10 GHz gallium nitride device reduces chip footprint by over 90%, enabling more compact radars and wireless communications equipment
Fujitsu Laboratories has announced that it has successfully developed the world’s first single- chip transceiver using GaN high electron mobility transistor (HEMT) technology that features an output of 6.3 W and that operates at a frequency of 10 GHz. In order to simultaneously handle strong transmission signals and weak incoming signals in the same chip, you need to efficiently switch between outgoing and incoming signals, while reducing the impact that outgoing signals have on incoming signals.
However, until now, it has been difficult to accomplish both of these objectives in tandem. Fujitsu Labs has resolved this issue by developing a duplexer with low signal loss using a GaN-HEMT, and through high-output circuit integration design technology that controls signal interference between the outgoing and incoming signals. The result is a transceiver chip with a footprint that is less than 10% of the size of the multiple chips that have been needed until now. With this technology, it is now possible to configure a high-output transceiver using just one chip, enabling systems such as radar equipment and wireless communications equipment to be made more compact.
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