Telecoms ♦ news digest convertors (BUCs).
Toshiba’s new C-Band GaAs FETs for microwave digital radios support point-to-point and point-to- multipoint terrestrial communications, and BUCs support satellite communications. The TIM5359- 16EL and the TIM5964-16EL operate in the 5.3 to 5.9 GHz range and the 5.9 to 6.4 GHz range respectively.
The TIM5359-16EL and TIM5964-16EL have an output power at one-dB gain compression point of 16W, or 42.5dBm (typ.), linear gain at one-dB gain compression point of 11.5dB (typ.) and power added efficiency of 38 percent.
“High gain and high power added efficiency features will help designers build energy-efficient microwave radios,” notes Homayoun Ghani, business development manager, microwave devices, for TAEC’s Discrete Business Unit.
“By combining our new 16W product along with the linearity enhanced broadband C-Band 4W microwave monolithic integrated circuit (MMIC), Toshiba’s TMD0608-4, a simple two-chip design solution is provided for microwave radio applications. The improved gain will help microwave designers reduce the number of parts in their overall system.”
Samples of the Toshiba high gain GaAs FET family are available now.
Sumitomo Electric premiers series of GaAs MMICs for communication
The firm has developed a family of singlechip multiple-input receiver MMICs and transmitter MMICs (or transceivers), which incorporate gallium arsenide 3-D MMIC chip technology
Sumitomo Electric Device Innovations USA, Inc. (Sumitomo), will showcase its E-band MMICs for radio link applications at the IMS 2012 Show in Montreal.
Sumitomo offers one-stop SMT solutions from 6 GHz to 80 GHz for radio link applications. Featured
July 2012
www.compoundsemiconductor.net 87
at IMS will be offerings for E-Band. The E-Band chip set utilises Wafer Level Chip Scale Package technology.
The firm says this technology achieves excellent frequency performance and easy, reproducible mounting by incorporating flip-chip, 3-D MMIC GaAs technology in products spanning from C-band up through E-band. Sumitomo’s low cost SMT chip set offering enables the design of compact, economical E-band transceivers.
The products will be on display at IMS 2012 at booth #2003.
Anadigics unveils ProEficient InGaP PAs for 4G
Employing the firm’s advanced indium gallium phosphide HBT MMIC technology, these modules are suited to for use in the world’s most widely used 3G/4G frequency bands
Anadigics has introduced the new ProEficient WCDMA / LTE power amplifier (PA) product family.
The company’s ProEficient PAs have been optimised for the next generation of 4G devices across all power levels. These products combine greater talk time in low-power mode with longer data application use in high-power mode. The result is an enhanced overall user experience and extended battery life across all operating conditions of modern smartphone and tablet devices, as well as lower overall system cost.
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