RF Electronics ♦ news digest
market, has acquired privately-held Nitronex Corporation.
Nitronex designs and manufactures GaN based RF solutions for high performance applications in the defence, communications, cable TV, and industrial & scientific markets.
Founded in 1999 and headquartered in Durham, North Carolina, Nitronex provides high-performance GaN-on-Silicon semiconductor solutions using its proprietary SIGANTIC manufacturing process.
RF5836
The ultra-small form factor and integrated matching minimises the layout area in the customer’s application and greatly reduces the number of external components. The RF5836 integrates a power amplifier (PA), single-pole double-throw switch (SP2T), and a power detector coupler for improved accuracy. The device is provided in a 3mm x 3mm x 0.5mm, 16-pin package. This module meets or exceeds the RF front end needs of IEEE 802.11a/n WiFi RF systems.
The device features a single supply voltage of 3.0V to 4.8V and a low control voltage above1.6V. It has an integrated 5GHz amplifier, SPT2T Tx/Rx Switch, and power detector coupler. POUT is 15.5dBm (11a, 54Mbps at 4% EVM) and 14.5dBm (11n, 65Mbps at 2.8% EVM). The low-height package is suited for SiP and CoB designs.
Applications for the module are in cellular handsets, mobile devices, tablets and in consumer electronics.
Gaas Labs acquires GaN RF innovator Nitronex
With this move, Nitronex hopes to expand its market presence in the rapidly growing, high performance, GaN RF power device market using its gallium nitride on silicon technology
Gaas Labs, LLC, a private investment fund targeting the communications semiconductor
The Nitronex process combines the superior power, efficiency and bandwidth performance of GaN with the reliability, ease of use and low-cost advantages of industry standard silicon substrates. Financial terms of the transaction were not disclosed.
“We are excited to add Nitronex, a leading innovator in GaN-based RF solutions, to our portfolio of RF semiconductor companies,” says John Ocampo, Co-Founder and President of Gaas Labs. We look forward to helping Nitronex further leverage its products and technologies and extend its RF market leadership.”
Charles Shalvoy, CEO of Nitronex comments on the acquisition, “John Ocampo and Gaas Labs have demonstrated their ability to build and develop companies that realise their full growth potential. Partnering with Gaas Labs is an important milestone for Nitronex, which will enable us to deliver greater value to our customers in the rapidly growing, high performance, GaN RF power device market. We are thrilled to continue advancing our GaN-on-Silicon technology and expanding our market presence with Gaas Labs’ backing and the aid of their strategic and operational expertise.”
TriQuint touts packaged GaAs LNAs for 400 to 2700 MHz
The firm claims the two devices deliver the lowest noise figure of any integrated, packaged solutions for base station and similar applications
TriQuint Semiconductor has announced initial sample availability of two packaged, surface-mount
July 2012
www.compoundsemiconductor.net 105
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