news digest ♦ RF Electronics
enable higher throughput, and provide greater coverage and range.
The AWB7125 wireless infrastructure PA provides +24.5 dBm linear output power, while the AWB7225 provides +27 dBm linear output power. Both power amplifiers are optimized for WCDMA, HSPA, and LTE small-cell base stations operating in the 860 MHz to 894 MHz frequency bands. Anadigics’ complete family of small-cell wireless infrastructure power amplifiers is manufactured using the Company’s exclusive InGaP-Plus technology to achieve best-in-class efficiency, linearity and thermal performance.
Pre-production samples of the AWB7125 are available now. Engineering samples of the AWB7225 are available now for qualified programs.
A new analogue variable gain amplifier operating at 400 to 2700MHz
The new RFVA0016 amplifier for broadband applications incorporates RFMD’s gallium arsenide HBT, indium gallium arsenide HBT and LDMOS technology
RFMD’s new amplifier is an integrated, analogue- controlled, Variable Gain Amplifier (VGA) with external matching, allowing operation in all bands from 400MHz to 2700MHz within a single module.
range. A mode logic pin enables the VGA to be selected for either a 0V to +3V or a +3V to 0V analogue-controlled attenuation slope. The RFVA0016 is a compact 5.2mm x 5.2mm multichip leadless laminate module with thermal vias for ultra- low thermal resistance, and is external matched to 50Ω at each individual band.
The mode pin enables a switch of the attenuation slope and a gain of 25dB. The ACPR is over -60dBc at +10dBm POUT (for the dual carrier WCDMA) and the device operates with a +5V supply .
The product is currently available in production quantities with pricing beginning at $8.72 each for 100 pieces.
Freescale breaks into GaN power RF market
Suitable for cellular infrastructure applications, the RF power innovator adds the efficiency, performance and bandwidth advantages of gallium nitride technology to its portfolio
Freescale Semiconductor has revealed its first RF power amplifier product built using GaN technology.
The company’s RF power GaN products will initially target the cellular infrastructure market, with potential future applications including avionics, radar, ISM and software-defined radio.
AFG25HW355S schematic RFVA0016
It features a linearity, with OIP3 greater than 40dBm, and provides over a 30dB gain control
112
www.compoundsemiconductor.net July 2012
Freescale’s first GaN product, the AFG25HW355S device, is the latest addition to its power amplifier portfolio. Current Freescale RF power offerings include 12V, 28V and 50V silicon LDMOS products, 5V GaAs HBT, 5V and 12V GaAs pHEMT solutions, and high-frequency SiGe technology featuring
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