1100 Etienne Brodu and Emmanuel Bouzy


Figure 4. Evolution of the diffraction pattern along a particular line scan crossing a cubic silicon twin boundary in on-axis transmission Kikuchi diffraction in scanning electron microscope at 30 keV. Thanks to the twin boundary plane being inclined by a few degrees relative to the surface of the FIB lamella, the in-depth position of the twin bound-


ary under the incident beam varies (and is known) along the line scan. The arrows in patterns 2 and 8 mark the very first appearance of spots associated to the other crystal. The solid lines in the patterns indicate bands of interest, along their length, associated specifically to the top or bottom crystal depending on the color (bands shared by both crystals are disregarded). When bands are close to disappearing from the patterns, they are indicated with dotted lines instead. Acquisition parameters: incident energy: 30 keV; objective aperture: 90 µm—low current mode (about 2.4 nA); sample thickness for this specific line scan: 100 nm; pattern resolution: 600×600 pixels; integration time: 18 ms; image averaging: 12× (216ms total per pattern); distance detector-sample: 27.5mm. The pattern background correction is performed by ESPRIT 2.0 by Bruker.


frame, in particular the very first emergence of new diffrac- tion spots. Both the high quality of patterns, thanks to appropriate acquisition parameters, and the stability of patterns, thanks to very few crystal defects, also helped tremendously to identify subtle variations in patterns induced by the in-depth motion of the twin boundary.


We assumed for the determination of the depth reso-


lution that the two intersections of the twin boundary with the top and bottomsurfaceswere met as soon as the very first spots associated to the other crystal were detected in diffraction patterns (see Methodology for the Determination of the Depth Resolution section). This is typically the case in


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