Microsc. Microanal. 23, 1091–1095, 2017 doi:10.1017/S1431927617012703
© MICROSCOPY SOCIETY OF AMERICA 2017
Selectively Electron-Transparent Microstamping Toward Concurrent Digital Image Correlation and High-Angular Resolution Electron Backscatter Diffraction (EBSD) Analysis
Timothy J. Ruggles,1,* Geoffrey F. Bomarito,2 Andrew H. Cannon,3,4 and Jacob D. Hochhalter2
1National Institute of Aerospace, Hampton, VA, USA 2Langley Research Center, National Aeronautics and Space Administration, Hampton, VA, USA 31900 Engineering, LLC, Clemson, SC, USA 4Department of Chemical and Biomolecular Engineering, Clemson University, Clemson, SC, USA
Abstract: Digital image correlation (DIC) in a scanning electron microscope and high-angular resolution electron backscatter diffraction (HREBSD) provide valuable and complementary data concerning local deformation at the microscale. However, standard surface preparation techniques are mutually exclusive, which makes combining these techniques in situ impossible. This paper introduces a new method of applying surface patterning for DIC, namely a urethane microstamp, that provides a pattern with enough contrast for DIC at low accelerating voltages, but is virtually transparent at the higher voltages necessary for HREBSD and conventional EBSD analysis. Furthermore, microstamping is inexpensive and repeatable, and is more suitable to the analysis of patterns from complex surface geometries and larger surface areas than other patterning techniques.
Key words: high-angular resolution EBSD, EBSD, digital image correlation, lithography, microstamping
INTRODUCTION High-angular resolution electron backscatter diffraction (HREBSD) can determine the local elastic strain and geo- metrically necessary dislocation (GND) content of crystal- line materials (Jiang et al., 2016; Ruggles et al., 2016b). Digital image correlation (DIC) performed in a scanning electron microscope (SEM) allows for microscale resolution of the total local deformation (Gupta et al., 2014; Yan et al., 2015). Data from these microscopy techniques can be used to vali- date and develop high fidelity plasticity models (Lim et al., 2014, 2015; Zhang et al., 2014; Dingreville et al., 2016). The information from DIC (total strain) and HREBSD (stress and GND density) is complementary, providing a decom- position of the elastic and plastic behavior of a crystalline material at themicroscale, which offers extended insight into model development. However, these characterization tech- niques have been mutually exclusive on the same surface at the same length scale, given the current state of sample preparation necessary for each technique. A sample well polished for EBSD generally does not contain sufficient fea- tures for DIC measurement, and patterns for DIC disrupt EBSD diffraction. This has limited the use of EBSD on pat- terned surfaces to initial microstructural characterization, sampling between speckles of the pattern at a higher length scale, and postmortem analysis. This paper introduces a new method of DIC pattern application, microstamping, which
*Corresponding author.
timothy.ruggles@
nasa.gov Received September 6, 2017; accepted October 16, 2017
leaves a pattern thin enough to be sufficiently transparent to EBSD at high accelerating voltages, but still capable of provid- ing enough contrast for DIC. This technique allows for the simultaneous collection of HREBSD and DIC data in situ. There are a number of established methods of pattern-
ing the sample for microscale DIC, that have variable com- patibility with EBSD techniques. Some patterning techniques degrade EBSD pattern quality but are nondamaging to the surface and removable, allowing for postmortem EBSD ana- lysis. Nanoparticle decoration and lithography are two such methods (Kammers & Daly, 2011; Di Gioacchino & Quinta da Fonseca, 2013; Gupta et al., 2014; Yan et al., 2015; Githens & Daly, 2017). It should be noted that EBSD patterns sometimes can be collected in spite of these patterning techniques, most notably in the case of colloidal silica nanoparticles, because they are small, amorphous and have a low effective atomic mass (Yan et al., 2015). This allows the recovery of the underlying grain structure. However, the EBSD pattern quality degrades. The extent to which this affects HREBSD methods, which require a greater precision than conventional indexing software, has not been reported. Etching (Ruggles et al., 2016a) and focused ion beam (FIB) patterning (Choi et al., 2014) are also available methods of applying a DIC pattern, but these methods are destructive and preclude the use of EBSD methods. This paper proposes residual layer urethane micro-
stamping as a method for concurrent HREBSD and DIC because of its selective transparency to electrons of different energy. A low atomic number, amorphous material is applied such that it is thin enough to be effectively
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180