Sheraton Frankfurt Airport Hotel 04 March


its contacts exceeding the pinch-off voltage. C3 varactor does not consume significant DC bias current in addition it offers several important advantages as an RF device: (1) it has no gate so the total channel length is more than two times smaller than in HFET with the same source – gate and gate-drain spacing and hence about the same breakdown voltage (2) it has no ohmic contacts this eliminates annealing the need to align the gate and further increases the breakdown voltage due to lower edge roughness (3) it can be controlled using either positive or negative bias polarity(4) provides a built-in DC block.


What industry challenge does this address? Modern RF systems require low loss high switching power high linearity low power consumption and broad range of operating temperatures. None of the existing RF devices simultaneously


meets these requirements. PIN-diodes require at least 20 mA forward bias current to be turned on they also need bias filters with bulky high-precision and expensive inductors. MEMS are vulnerable to hot switching their switching times are limited to a few microseconds and many MEMS subtypes require high operating voltage and vacuumed packaging. Si MOSFETs and GaAs HEMTs suffer from low breakdown voltages and cannot achieve the required linearity levels.


How does it solve the problem? The III-Nitride C3 varactor design meets all requirements mentioned above for RF control applications. C3 varactor offers high-yield simple and robust anneal-free alignment-free fabrication technology fully compatible with Power Amplifiers and the other MMICs.


Industry Innovation Award Brolis Semiconductors Development of novel GaSb based optoelectronics


Brolis Semiconductors develops novel optoelectronic components and materials based on GaSb material platform using their key knowledge of molecular beam epitaxial growth of very complex compounds. The company founders have demonstrated a number of first-of-a-kind GaSb type-I lasers operating at room temperature at wavelengths above 3400 nm. The team has established a state-of-the-art MBE and laser diode facility in order to commercialise the technology and bring the beyond-state-of- the-art devices to market already next year.


What industry challenge does this address? Brolis Semiconductors develops technology for devices for wavelength range 1800 - 4000 nm which lacks reliable compact laser sources operating in continuous wave at room-temperature. Their MBE technology offers unique opportunities for development of new generation thermal imaging photo-voltaic and ultra-high-speed and low power consumption technologies based on antimonides.


How does it solve the problem?


The Brolis technology brings the availability of ultra-compact power efficient electrically pumped room-temperature operating laser diodes in the 1800 nm - 4000 nm wavelength range for numerous applications in defence industrial process monitoring medicine and research. The epitaxy service provides unmatched quality antimonide and arsenide epitaxial wafers for thermal imaging TPV CPV and new generation HEMT and HBT applications.


January / February 2013 www.compoundsemiconductor.net 51


EPISTAR LAB Warm White High Voltage Chipset


With its outstanding efficacy, higher CRI, and competitive lm/$, the solution of direct red platform is widely used in warm white application. In 2012 EPISTAR LAB successfully achieved the warm white efficacy of 216 lm/W, with an operating current of 5 mA and CRI of 87 Ra at CCT of 2700K. Under a typical driving current of 15mA (or about 1 W operation equivalent), the luminous efficacy of 197 lm/W was achieved.


EPISTAR LAB adopts several technologies in high voltage chips, such as the novel substrate transfer process, lower MQW light absorption, fine structure for increasing the photon extraction efficiency, improvement on the current spreading uniformity, and


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