Register at: www.cs-international.net/registration Dr. Kolja Haberland, LayTec AG, Chief Technology Officer


In-Situ Monitoring - The Key to MOCVD Production Process Control and Yield Enhancement In-situ metrology is a key enabling technology in today´s LED and Laser production by MOCVD. Especially for GaN based LED devices it is common understanding, that in-situ reflectance, temperature and curvature measurements are mandatory for device development and production yield control. With the industry moving to larger wafer sizes, the most important parameter for LED yield remains the control of the GaN surface temperature during deposition of the active quantum well material. In the talk recent results from LED production on 6” sapphire by tight wafer surface temperature control via uv pyrometry will be shown. Beyond this, state of the art in-situ methods for process development, yield enhancement and statistical process control will be presented for LED, HBT, CPV and GaN/Si high power applications.


Dr Michael Lebby, Translucent Inc, General Manager & Chief Technology Officer Challenges & Opportunities of Using Epitaxial GaN, GeSn, & Rare Earth Oxides on Large Format Silicon Wafers for Power Electronics, Solar, & Lighting


Optoelectronic and electronic technologies and products that have been based on semiconductors have grown quickly over the past decade, with many examples from industrial, military, and now consumer markets that utilize solar cells, LEDs and power FETs. This talk will review the status of these green applications and the need for economies of scale as product volumes increase.The challenge of these new green opportunities is to figure how to successfully put compound semiconductor optoelectronic and electronic technologies onto large (150mm and 200mm) SEMI standard silicon wafers. The talk will show that rare earth oxides (REO) for GaN-on-Si and Ge-on-Si offer scalable solutions that are cost effective, exciting, and will enable large, low cost, flat semiconductor platforms for energy efficient Power FETs, high performance LEDs for solid state lighting, and high efficiency solar cells for concentrated photovoltaics.


Noriyuki Matsubara, Panasonic Europe, Dry Etching and Photolithography Engineer Dry Etching Technology for III-V Devices


The presentation will give an overview about latest dry etching technology for III-V devices. Target topics are recess etching for GaN HEMT devices and trench etching for SiC Trench MOSFET devices. We will also present plasma dicing solutions for Si-based LED wafer and other wafer products: Si dicing ,GaN dicing and other materials. We will discribe special values against conventional dicing methods such as mechanical dicing and laser dicing. Various process flows will be discussed. We will also present typical equipment characteristics and needs and review Panasonic APX300 Dry etching machine concept and capabilities.


Gregg Wallace, Temescal, Managing Director


Fundamental E-Beam Coating Collection Efficiency & Paths to Improvement For 20+ years, electron beam guns have been used in liftoff processing and while throughput remains fundamental to COO, little was published about collection efficiency limits of classic liftoff processing. Generally, uniformity masks are used beneath hemispherical, rotating substrate carriers to “trim” variation from the electron-gun’s flux product which is best described as cosine based radiation from a point source. As carriers are enlarged allowing for increases in wafer and batch size, the mask must also grow to “trim” the same source of non-uniformity in the flux. This presentation explores the limits of the classic liftoff metal process offering alternatives to enhance signifcantly material collection efficiency.


Pars Mukish, Yole Développement, Market & Technology Analyst New Trends in LED Industry: A focus on China and GaN-on-Si LEDs


Growth of the LED industry has come initially from the small display application and has been driven forward by the LCD display application. Nowadays, the industry is entering its 3rd growth cycle: General Lighting, the next killer application of LEDs.This new wave will be impacted by two major trends: The development of the LED Industry in China and the development of GaN-on-Si-LEDs. In this presentation, we will discuss about impacts of the entry of Chinese players in the LED industry at the levels of supply chain, competition, price. Also, we will also define the potential of GaN-on-Si LEDs and how this technology could evolve in the LED market.


Dr Schang-jing Hon, Epistar Corporation, Associate Vice President High-Voltage LED for General Lighting Application


The breakthrough in high power GaN LED’s efficiency makes the adoption of these solid state light emitting devices into general lighting application earlier than expected before. However, cost is one of the most important factors for the adoption of the general lighting application. So far, the most popular driving current for 1mm square die is about 350mA. In order to improve the lumen per cost, there is a trend to increase the driving current up to 1.5A or even higher. As well known, the droop effect plays an important roll for LED operating at high current density. Among the many factors affecting the droop effect, current crowding effect has pronouncedly degraded the performance of the LED at high current density. In the paper we propose a novel high-voltage LED structure to achieve the extreme high power LED with high efficiency and low cost for manufacturing. The design of a series multi-junctions connection is used for high voltage LED chip. The advantages of high-voltage LED are to provide the LED device with high efficiency due to the better current spreading character and to simplify the driving circuit by using high voltage and low current operation condition.


Professor Tao Wang, Seren Photonics, Scientific Advisor Improving LED Performance


InGaN/GaN multiple quantum well (MQW) based blue/green light emitting diodes (LEDs) have been commercialized. However, the performance of current white LEDs is still far from the final target, namely, 200_260 lm/W. Therefore, it is necessary to further improve the optical output of blue and green LEDs. In response to the requirement, a number of challenges need to be met: Self-built internal electrical fields in InGaN/GaN MQWs, which cause a fundamental limit in further improving optical performance of LEDs, especially for the LEDs in the green spectral region; Efficiency droop under injection currents for a practical application; Manufacturing costs due to epiwafers, in particular, growth of LEDs on non-polar/semi-polar GaN substrates. Seren Photonics Ltd (Sheffield, UK), in collaboration with the III-nitride Optoelectronic research team of University of Sheffield, has developed a nanotructuring approach for fabrication of blue/green LEDs with a massive improvement in optical performance, but based on standard commercialised (not best) epiwafers. Furthermore, the Sheffield team has also developed another simple but cost-effective approach using III-nitride nanostructure, leading to a great improvement in the crystal quality of both semi-polar/nonpolar GaN templates on sapphire, which are ideal for growth of high performance blue/green LEDs.


Marianne Germain, EpiGaN, CEO EpiGaN nv


GaN epiwafers for power and RF electronics: from development to production While the key advantages of GaN-on-Si technology for next generation power electronics are better and better recognized (among others: higher efficiency, higher power density, more compact and lighter power converters…), EpiGaN launched, in 2012, its own production site for GaN-on-Si epiwafers for electronics, with wafer diameter up to 150 mm. EpiGaN production wafers include its unique in-situ SiN surface termination, demonstrated to act as efficient surface passivation and optimal III-Nitride surface stabilization. We will review EpiGaN key steps towards larger market adoption of GaN technology, while we demonstrated the first 200 mm SiN/AlGaN/GaN epiwafers suited for electronics, showing the same excellent electrical characteristics as smaller wafer diameter and excellent uniformity (below 2%).


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