Agenda Day 1 4th
All speakers and March 2013
Chaired by Dr Andrew Nelson, IQE President and Chief Executive Officer
Joined BT Research Laboratories in 1981, leading the group responsible for the development of MOCVD technology for the manufacture of opto-electronic devices for optical fibre communications. He subsequently managed the technology transfer from BT to Agilent. Together with Mike Scott, he founded EPI in 1988, becoming Managing Director in 1991 and Chairman and Chief Executive Officer in 1996. Dr Nelson was appointed Chairman and CEO of IQE Plc in April 1999 and became CEO in February 2002 when he split his role and Dr Godfrey Ainsworth was appointed to the role of Chairman.
presentations are subject to change
Keynote speaker Dr Wilman Tsai, Intel Corporation, Program Manager of Technology Manufacturing Group, Intel
III-V CMOS for High Performance & Low Power Logic Devices To continue CMOS device scaling per Moore’s Law, the use of high mobility channel materials such as compound semiconductor is necessary to achieve high logic device performance at low power operation. In this talk, some of the critical processes and modules of implementation of III-V semiconductor channels will be reviewed. These include III-V growth on Si, high k dielectrics and junctions. The need of low defect density in III-V CMOS processing will be also discussed.
Asif Anwar, Strategy Analytics, Director Strategic Technologies Practice What’s the Future of GaAs Microelectronic Manufacturing
Despite the continuing penetration of GaAs into the high volume smartphone market and related wireless sectors, 2013 is shaping up at the time of writing to be a difficult year for the industry. GaAs device manufacturing faces multiple challenges including the ever present question over what strategies companies should adopt vis-a-vis in-house manufacturing flexibility versus cost effective outsourcing. External challenges also continue to dog GaAs manufacturing as other technologies successfully encroach on areas once considered almost a proprietary domain for GaAs devices. Strategy Analytics presents our latest views on these questions and other issues related to the future of GaAs microelectronic manufacturing.
Dr Thomas Uhrmann, EV Group, Business Development Manager
Wafer-Level Packaging of Compound Semiconductor Devices Wafer level packages (WLP) of compound semiconductor and other radio frequency devices has gained considerable importance. Major benefits, such as reduced package size and low cost, high-volume batch packaging established a business of WLP in mobile handsets and other devices. From a technical view, WLP of compound semiconductors - such as GaAs, SiC, GaN or InP - using gold pads, fragile air bridges, trenches and cavities, differs much from Si-based WLP. Wafer bonding is a central process for this process flow, where cavities are sealed by different techniques and materials. On the contrary to this cap-based WLP approach, shell-based packaging is the second prominent approach to WLP. Discussing both approaches forms main content of this contribution.
Michelle Bourke, Oxford Instruments, Senior Product Manager
Review of The Various Deposition Techniques and Their Uses in Compound Semiconductor Devices As the world of Compound Semiconductor devices and their applications develop the associated manufacturing techniques must progress also. Chemical vapour deposition (CVD) has been known and used for a number of years and the performance targets on the material continue to be demanding. At Oxford Instruments we have maintained our development of deposition methods and in this paper we will review the history that now includes ICPECVD and Atomic Layer Deposition and their uses in Compound Semiconductor Device manufacture.
Gunnar Stolze, Oclaro Inc, Vice President, GlobalSales Industrial and Consumer High Power Lasers
High-power lasers are quickly expanding into more industrial and consumer applications where high performance, reliability, cost efficient designs and high- volume manufacturing are key requirements. In addition, new emerging markets are appearing that can take advantage of laser diode technology, such as 3D sensing, optical interconnects, optical and finger navigation and display technologies. In this presentation, Mr. Gunnar Stolze from Oclaro, the leading provider of high-power lasers, will explain how laser diodes and VCSELS have matured to effectively address these high-growth markets. This will include a history of high-power lasers and then a technical overview of how they are uniquely meeting the needs of these new markets today and in the future.
Malcolm Harrower, Indium, Sales Manager Europe Overview of CS Critical Elements – Indium, Gallium and Germanium The aim of the talk is to inform about the sources of some of the key metals on which the CS industry is based and to show the various market factors which help to shape the industry in these metals. A summary of extraction sources and supply routes, using global statistics to demonstrate an overview of the world-wide supply and demand situation. This will show how, despite some erroneous adverse publicity concerning availability, these important metals are more than capable of helping the Compound Semiconductor industry to develop far into the future.
Silvia Schwyn Thöny , Evatec, Senior Process Engineer Improving LED efficiency: Advances in current spreading and DBR coatings Optimised ITO current spreading layers and DBR coatings make important contributions to the enhancement of the LED efficiency. ITO sputtering processes without damage to the GaN crystal structure will be presented with ITO contact and sheet resistances matched to the doping level of the p-GaN cap layer in order to guarantee optimal current spreading, thus improving the output power of the LED. DBR mirror coatings are an important element enhancing extraction efficiency. Essential factors for high performance DBR mirrors are both the appropriate initial mirror design and tight process control techniques capable of individual layer thickness accuracy in the nanometer range during manufacture. Practical results using “in-situ optical thickness monitoring” during deposition will be presented.
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