news digest ♦ Power Electronics
architect of IR’s operational transformation strategy. I thank Mike for his leadership and contribution to IR’s growth over the past four years and look forward to his continued leadership as the Executive Vice President of GaN Technologies and his success in commercialising the technology. In his new role Mike will be responsible for all aspects of GaN, including process and product development, product marketing, and manufacturing,” continues Khaykin.
“I look forward to leading this critical strategic initiative for IR,” adds Mike Barrow. “We have a highly talented GaN technology team, a large library of intellectual property, and have successfully validated our GaN technologies with Tier 1 customers. The next step is for us to fully commercialise this exciting new platform. IR is already a market leader in silicon power management technologies and it is my goal to extend this lead and open up new opportunities with our GaN technologies.”
China uses Aixtron to move into GaN power electronics
Dynax Semiconductor is to receive its first Aixtron production system to manufacture gallium nitride on silicon carbide (SiC) and silicon substrates
Chinese firm, Dynax Semiconductor Inc. has placed its first purchase order for an Aixtron Close Coupled Showerhead (CCS) CRIUS MOCVD system.
The reactor will be used to produce GaN and related nitride semiconductor epitaxial layers on SiC and silicon substrates for microwave and power devices.
Aixtron says it will be the first system in China dedicated to GaN electronics.
After installation and commissioning the system is now ready to produce high quality GaN epi-wafers.
“This is an important step for us”, NaiQian Zhang, President and CEO of Dynax Semiconductors, comments. “High power and high efficiency GaN electronic devices are the key components for next generation power management and data communications. This disruptive technology will help us achieve a sustainable society. The Aixtron reactor is a proven system for this application”.
Frank Wischmeyer, Vice President and Program Manager Power Electronics at Aixtron, says, “The Dynax technical team already has extensive experience with Aixtron’s CCS technology. We are looking forward to supporting the customer with our expertise on accelerating the GaN power device market introduction in China.”
Compared to conventional silicon devices, GaN electronic devices provide superior performance in RF and power electronic applications in terms of efficiency and power density.
But two major challenges have to be met.
Due to the strong lattice mismatch between GaN and foreign substrates, GaN has to be grown in a special process.
To compete with silicon devices, manufacturing costs have to be as low as possible which requires MOCVD technology to provide high uniformity and reproducibility.
Dynax Semiconductor Inc., Suzhou, was founded in 2011 to manufacture GaN electronic devices. The company is based in Kunshan, Jiangsu province in east China. Dynax produces electronic devices for electronics, data communications, automotives, and motor control markets.
Aixtron CCS system 196
www.compoundsemiconductor.net January/February 2013
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