Lasers ♦ news digest


brilliance compared to commercially available broad area emitters. They also aim to accomplish dense and coarse spectral multiplexing schemes pursued for power scaling.


What’s more, coherent beam combining techniques that phase-couple bars to produce nearly diffraction limited output will be investigated.


During the project, a sequence of increasingly brilliant demonstrators will be developed, each targeting a specific industrial application. Manufacturability and cost down-scaling issues are also addressed by integrating micro-optical beam shaping and beam combination into the production process.


The project, was initially coordinated by Dilas Diodenlaser GmbH in Germany. The consortium includes researchers from University of Nottingham, United Kingdom, the Fraunhofer Institute for Laser Technology ILT and the Ferdinand Braun Institute FBH, both Germany, the Laboratoire Charles Fabry of the Institut d’Optique at CNRS, France and the industrial partners Modulight of Finland and Bystronic, Switzerland.


Ultratech acquires assets of Cambridge Nanotech


The firm is expanding its nanotechnology and IP portfolio with atomic layer deposition to enhance capability in new market opportunities such as semiconductors


Ultratech, Inc., a supplier of laser-processing systems used to manufacture semiconductor devices has acquired the assets of Cambridge Nanotech, Inc. (Cambridge).


Based in Cambridge, Massachusetts, Cambridge was an innovator in atomic layer deposition (ALD) solutions with hundreds of system installations in research and manufacturing settings worldwide.


Financial terms of the transaction were not disclosed.


With this acquisition, Ultratech expands its nanotechnology and intellectual property (IP) portfolio with ALD technology to provide solutions


for new layers within the electronics industry and entry into new markets, such as biomedical and energy.


Due to the increasing interest in nanoscience, ALD has emerged as a critical technology for depositing precise nanometre-thin films. Typical applications of ALD require the manufacture of very precise nanometre - thin, pinhole - free and conformal thin films on many shapes and geometries.


As a result, this technology will be in high demand in volume manufacturing environments and in particular for micro-electro-mechanical systems (MEMs), implantable devices in the biomedical sector and batteries and fuel cells in the energy arena.


ALD is an enabling technology and provides coatings and material features with significant advantages to other existing techniques.


Ultratech Chairman and Chief Executive Officer Arthur W. Zafiropoulo says, «As a global leader in experimental ALD solutions, Cambridge has developed a portfolio of valuable technology and systems. We plan to integrate the intellectual property acquired from Cambridge Nanotech into Ultratech and include the ALD systems in our nanotechnology product group. By increasing our IP and expanding our nanotechnology portfolio to new levels, we expect to generate a new revenue stream in existing and new markets. We have focused on technology solutions and support our global customer operations. We expect that this acquisition will enhance our short-term as well as our long-term growth expectations.»


Ultratech, Inc. designs, manufactures and markets photolithography and laser processing equipment. Founded in 1979, the company›s lithography products deliver high throughput and production yields at a low, overall cost of ownership for bump packaging of integrated circuits and HB-LEDs.


A pioneer of laser processing, Ultratech developed laser spike anneal technology, which increases device yield, improves transistor performance and enables the progression of Moore›s Law for 32 nm and below production of state-of-the-art consumer electronics.


January/February 2013 www.compoundsemiconductor.net 153


Page 1  |  Page 2  |  Page 3  |  Page 4  |  Page 5  |  Page 6  |  Page 7  |  Page 8  |  Page 9  |  Page 10  |  Page 11  |  Page 12  |  Page 13  |  Page 14  |  Page 15  |  Page 16  |  Page 17  |  Page 18  |  Page 19  |  Page 20  |  Page 21  |  Page 22  |  Page 23  |  Page 24  |  Page 25  |  Page 26  |  Page 27  |  Page 28  |  Page 29  |  Page 30  |  Page 31  |  Page 32  |  Page 33  |  Page 34  |  Page 35  |  Page 36  |  Page 37  |  Page 38  |  Page 39  |  Page 40  |  Page 41  |  Page 42  |  Page 43  |  Page 44  |  Page 45  |  Page 46  |  Page 47  |  Page 48  |  Page 49  |  Page 50  |  Page 51  |  Page 52  |  Page 53  |  Page 54  |  Page 55  |  Page 56  |  Page 57  |  Page 58  |  Page 59  |  Page 60  |  Page 61  |  Page 62  |  Page 63  |  Page 64  |  Page 65  |  Page 66  |  Page 67  |  Page 68  |  Page 69  |  Page 70  |  Page 71  |  Page 72  |  Page 73  |  Page 74  |  Page 75  |  Page 76  |  Page 77  |  Page 78  |  Page 79  |  Page 80  |  Page 81  |  Page 82  |  Page 83  |  Page 84  |  Page 85  |  Page 86  |  Page 87  |  Page 88  |  Page 89  |  Page 90  |  Page 91  |  Page 92  |  Page 93  |  Page 94  |  Page 95  |  Page 96  |  Page 97  |  Page 98  |  Page 99  |  Page 100  |  Page 101  |  Page 102  |  Page 103  |  Page 104  |  Page 105  |  Page 106  |  Page 107  |  Page 108  |  Page 109  |  Page 110  |  Page 111  |  Page 112  |  Page 113  |  Page 114  |  Page 115  |  Page 116  |  Page 117  |  Page 118  |  Page 119  |  Page 120  |  Page 121  |  Page 122  |  Page 123  |  Page 124  |  Page 125  |  Page 126  |  Page 127  |  Page 128  |  Page 129  |  Page 130  |  Page 131  |  Page 132  |  Page 133  |  Page 134  |  Page 135  |  Page 136  |  Page 137  |  Page 138  |  Page 139  |  Page 140  |  Page 141  |  Page 142  |  Page 143  |  Page 144  |  Page 145  |  Page 146  |  Page 147  |  Page 148  |  Page 149  |  Page 150  |  Page 151  |  Page 152  |  Page 153  |  Page 154  |  Page 155  |  Page 156  |  Page 157  |  Page 158  |  Page 159  |  Page 160  |  Page 161  |  Page 162  |  Page 163  |  Page 164  |  Page 165  |  Page 166  |  Page 167  |  Page 168  |  Page 169  |  Page 170  |  Page 171  |  Page 172  |  Page 173  |  Page 174  |  Page 175  |  Page 176  |  Page 177  |  Page 178  |  Page 179  |  Page 180  |  Page 181  |  Page 182  |  Page 183  |  Page 184  |  Page 185  |  Page 186  |  Page 187  |  Page 188  |  Page 189  |  Page 190  |  Page 191  |  Page 192  |  Page 193  |  Page 194  |  Page 195  |  Page 196  |  Page 197  |  Page 198  |  Page 199  |  Page 200  |  Page 201  |  Page 202  |  Page 203  |  Page 204  |  Page 205  |  Page 206  |  Page 207  |  Page 208  |  Page 209  |  Page 210  |  Page 211  |  Page 212  |  Page 213  |  Page 214  |  Page 215  |  Page 216  |  Page 217  |  Page 218  |  Page 219  |  Page 220  |  Page 221  |  Page 222  |  Page 223  |  Page 224  |  Page 225  |  Page 226  |  Page 227  |  Page 228  |  Page 229  |  Page 230  |  Page 231  |  Page 232  |  Page 233