Equipment and Materials ♦ news digest
As announced on August 16th, its only customer REC Wafer Norway AS filed for insolvency in the summer of this year. Subsequently, SiC Processing AS has started a solvent winding-up procedure with the consent of its major creditors. Selected creditors have now decided to not maintain their consent, which is required for a solvent winding-up.
GaN devices on large scale (111) silicon substrates.
Now, this experience is being transferred to growth on Si(001) and Si(110) substrates. This is because GaN based power electronics can be easily integrated with standard silicon electronics (CMOS). What’s more, like Si(111), these substrates are also available in large sizes of up to 300 mm.
In October 2012, Jonas Hennig of Otto-von- Guericke Universität Magdeburg in Germany reported results on high performance GaN HEMT structures grown on Si(001). The structures incorporated highly optimised interlayers to control stress and defect density.
The results were presented at the International Workshop on Nitride Semiconductors in Japan.
Financial consequences for SiC Processing GmbH, its creditors or creditors of its other subsidiaries beyond the cases mentioned in the ad-hoc announcement of 16th August 2012 are currently not foreseen.
With approximately 755 employees worldwide, SiC Processing GmbH is located in 5 countries all over the world with production sites in Germany, China and US and a sales office in Italy. Production sites in Norway were closed down in mid 2012. The founder family holds a 25 percent stake beside the majority shareholder Nordic Capital Fund VII.
Controlling GaN-on- silicon(001) growth with insitu monitoring
Laytec has reported EpiCurve TT results obtained during the growth of gallium nitride HEMTs on Si(001) substrates
The growth of GaN on Si(111), especially for LEDs, is quite well known and relatively controllable.
Cooldown-assisted layer cracking as a result of high tensile stress can be prevented and crystal quality can be enhanced by sophisticated interlayers. Many institutions are using LayTec‘s EpiCurve TT tool with advanced curvature resolution to grow high quality
Figure 1: In-situ measurements of temperature (red) and curvature (black)by EpiCurve TT during GaN on Si(001) growth.
The three combined reflectance signals help to determine the growth rates and allow adjustment of the growth parameters. In addition, the 405 nm reflectance (the black line in Figure 2 below), provides information on the structural interface quality.
January/February 2013
www.compoundsemiconductor.net 213
According to Hennig, in-situ growth monitoring by Epi-Curve TT is a great help for their strain engineering.
The well pronounced Fabry-Perot oscillations at 633 nm (red) and 950 nm (blue) in correlation with the smooth development of the curvature show the high quality of the GaN. What›s more, during the growth of interlayers, when the temperature is being reduced, an abrubt increase in curvature can be observed as shown in Figure 1 below.
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