Sheraton Frankfurt Airport Hotel 04 March
substrates and windows. Rubicon is a vertically-integrated manufacturer with capabilities in crystal growth, high precision core drilling, wafer slicing, surface lapping, large-diameter polishing and wafer cleaning processes, which the company employs to convert the bulk crystal into products with the quality and precision specified by its customers. The company is the market leader in larger diameter products to support next- generation LED, RFIC and optical window applications.
Light Emitting Diodes (LEDs) are the future of lighting because they are environmental friendly, durable, have much longer life and consume considerably less energy than traditional lighting sources. LEDs are used for backlighting in nearly all mobile applications such as cell phones and GPS systems. Rapidly growing applications for LEDs includes larger display backlighting for notebook computers, desktop monitors and LCD televisions as well as giant LED displays for stadium signage and electronic
advertising. LED streetlights and LED replacement bulbs for commercial and residential lighting are also beginning to displace existing lighting solutions.
Sapphire is the predominant substrate material used as the foundation to produce a vast majority of all blue, white, green and UV LEDs. Sapphire substrates are also used to produce blue laser diodes for applications such high-definition DVD players and gaming systems.
LED production is now migrating to larger diameter sapphire wafers which fit well with Rubicon’s cost effective, large diameter ES2 crystal growth and sapphire fabrication technologies. Their proprietary ES2 crystal growth technique along with expertise in wafer fabrication enables the company to deliver customised products tailored to meet customers’ needs.
Compound Semiconductor Manufacturing Award G5+ : 5 x 200mm GaN-on-Si MOCVD Reactor
With its latest product AIX G5, AIXTRON SE has introduced a 5x200 mm GaN-on-Si (Gallium Nitride on Silicon technology package for its AIX G5 Planetary Reactor® platform). Following a customer-focused development program, this technology was designed and created in AIXTRON’s R&D laboratory and consists of specially designed reactor hardware and process capabilities. It is now available as a part of the AIX G5 product family and any existing G5 system can be upgraded to this latest version. Suited for GaN power electronics as well as for LED on Si applications it addresses the industry’s key requirements in a unique way
Highest throughput with 5x200 mm reactor capacity Uniformity pattern with rotational symmetry Behaves like a silicon single wafer reactor and therefore enables highest yields targeting greater than 95% area in spec and controlled wafer bow of 20µm min-max final bow
Capability to use standard thickness 200 mm silicon wafers Industry-wide the only reactor that enables managing the temperature gradient through the wafer
In-situ temperature profile tuning Customised wafer carrier temperature optimisation according to customer device requirements
44
www.compoundsemiconductor.net January / February 2013
What industry challenge does this address? GaN-on-Si technology is the technology of choice for power electronics applications and additionally a very promising candidate for high performance low cost HB-LED manufacturing. It is assumed that LEDs on 200mm Si is the disruptive technology that enables manufacturing cost reductions of 60%, compared to today’s mainstream 100mm sapphire. The challenge was to develop a reactor that produces GaN based devices on silicon
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186 |
Page 187 |
Page 188 |
Page 189 |
Page 190 |
Page 191 |
Page 192 |
Page 193 |
Page 194 |
Page 195 |
Page 196 |
Page 197 |
Page 198 |
Page 199 |
Page 200 |
Page 201 |
Page 202 |
Page 203 |
Page 204 |
Page 205 |
Page 206 |
Page 207 |
Page 208 |
Page 209 |
Page 210 |
Page 211 |
Page 212 |
Page 213 |
Page 214 |
Page 215 |
Page 216 |
Page 217 |
Page 218 |
Page 219 |
Page 220 |
Page 221 |
Page 222 |
Page 223 |
Page 224 |
Page 225 |
Page 226 |
Page 227 |
Page 228 |
Page 229 |
Page 230 |
Page 231 |
Page 232 |
Page 233