Sheraton Frankfurt Airport Hotel 04 March Substrates & Materials Award Kyma Technologies 150-mm 4HN Silicon Carbide Epitaxial Wafers


In 2012 Cree successfully developed new high quality low micropipe 150-mm 4H n-type silicon carbide, (SiC) epitaxial wafers. Cree’s latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines for 150-mm epitaxial wafers with highly uniform epitaxial layers as thick as 100 microns.


SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components including, LED power switching devices and RF power transistors for wireless communications. Cree’s 150-mm diameter single crystal SiC substrates enable cost reductions and increased throughput while bolstering the continued growth of the SiC industry. Cree’s ability to deliver high volumes of 100-mm epitaxial wafers is unrivalled in the SiC industry and the latest 150-mm technology continues to raise the standards for SiC wafers.


Cree’s vertically integrated approach offers customers a complete solution for high quality 150-mm SiC epitaxial wafers providing industry leaders within the power electronics market the stable supply they demand.


What industry challenge does this address? Cree is successfully addressing the lack of availability of affordable high quality SiC materials within the power electronics market.


How does it solve the problem?


Cree leads the SiC materials marketplace in driving to larger diameters and this latest advancement lowers device cost and enables adoption for customers with existing 150-mm diameter device processing lines. Cree’s vertically integrated approach offers customers of a complete solution for high quality 150-mm SiC epitaxial wafers providing industry leaders within the power electronics market the stable supply they demand.


10-Inch Diameter Aluminum Nitride on Sapphire Template Product


Kyma Technologies, Inc., a supplier of crystalline aluminium nitride (AlN) and gallium nitride (GaN) materials and related products and services, announced in 2012 the successful demonstration of a 10-inch diameter aluminum nitride (AlN) on sapphire template.


Kyma’s AlN templates are manufactured using its patented plasma vapour deposition of nanocolumns (PVDNC™) technology, which provides GaN LED manufacturers with throughput, cost, and performance benefits. LED manufacturers can choose Kyma’s PVDNC™ AlN templates as a replacement for bare and patterned sapphire substrates by manufacturers of blue, green, and white light emitting diodes (LEDs).


Until recently, the wafer diameter standard for GaN LED wafer manufacturing has been 50mm (2”). Recently, sapphire manufacturers have made much progress in increasing the size of sapphire boules from which ever larger sapphire substrates can be sliced, with sapphire diameter demonstrations up to 12” being achieved by certain sapphire providers. (The 250-mm (10-inch) diameter sapphire substrate was provided courtesy of Monocrystal, of Stavropol, Russia.)This has enabled some of the major GaN LED manufacturers to begin transitioning to larger diameter sapphire, up to 150-mm (6-inch) in some cases, to enhance manufacturing throughput and to achieve better economies of scale. Kyma believes the LED community will begin looking beyond 150mm (6-inch) diameter in the next few years.


In 2011 Kyma announced the successful commissioning of its new high volume PVDNC™ AlN template manufacturing tool and the demonstration of the world’s first 300mm (12-inch) diameter AlN on silicon template that is suitable for high quality gallium nitride (GaN) growth.


Kyma’s 10” diameter PVDNC AlN on sapphire template is pictured along with smaller diameter (6” and 4”) products.


Rubicon Technology 6-inch sapphire substrates


Rubicon Technology is an advanced electronic materials provider that is engaged in developing, manufacturing and selling monocrystalline sapphire and other crystalline products for light-emitting diodes (LEDs), radio frequency integrated circuits (RFICs), blue laser diodes, optoelectronics and other optical applications. The company applies its proprietary crystal growth technology to produce very high-quality sapphire in a form that allows for volume production of various sizes and orientations of


January / February 2013 www.compoundsemiconductor.net 43


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