Compound Semiconductor January/February 2013

Power Electronics ♦ news digest

Oleg Khaykin, International Rectifier’s President and Chief Executive Officer.

“Both Gary and Mike have outstanding track records in the semiconductor industry and I am confident in their leadership and management capabilities to drive two of our most critical initiatives.”

Figure 2: In-situ reflectance measurements by EpiCurve TT at three wavelengths:

blue – 950 nm, red – 633 nm, black - 405nm

The work at Otto-von-Guericke University and other institution which use LayTec‘s in-situ tools for silicon applications shows that the quality of GaN-on- silicon can be significantly improved by advanced curvature monitoring in combination with multiple wavelength reflectance.

IR restructures to commercialise GaN-on- silicon

The firm has appointed former VP and COO Mike Barrow to push gallium nitride technology for power device applications

International Rectifier Corporation has appointed Gary Tanner as Executive Vice President and Chief Operations Officer, effective January 2nd, 2013.

Tanner, 60, will report directly to Oleg Khaykin, President and Chief Executive Officer, and will be responsible for the continued implementation of the company’s operational transformation strategy.

Tanner will succeed Mike Barrow, 58, who will now lead the company’s efforts to commercialise its GaN on silicon technology.

“As we position IR for the next phase of growth, the execution of our operational transformation strategy and the successful launch of our GaN technology platform will be two of our major focus areas,” says

“I am excited about the opportunity to join International Rectifier and help build upon the strong foundation that is already in place,” adds Gary Tanner. “I look forward to working with IR’s talented operations team to continue implementing our operational transformation strategy. We believe that doing so will allow us to re-size our operations, reduce costs, effectively scale the business during an up-cycle and significantly reduce the downward margin pressure during a down cycle.”

Tanner brings over 35 years of semiconductor industry experience to IR and most recently served as Chief Executive Officer at Zarlink Semiconductor Inc., which was acquired by Microsemi Corporation in October, 2011.

Prior to his role as Chief Executive Officer. Tanner served as Chief Operating Officer where he was responsible for increasing Zarlink’s operational efficiency and streamlining operations. He joined Zarlink in 2007 as Senior Vice President of Worldwide Operations via the acquisition of Legerity where he served as the Head of Operations.

Before Zarlink, Tanner worked for nine years at Intel Corporation, where he held various positions managing domestic and international manufacturing operations. Prior to Intel, Tanner held various management positions in fab operations at National Semiconductor, Texas Instruments and NCR. Tanner holds a Bachelor of Science degree in Technical Management from Regis College.

“The company has made a significant investment in developing GaN technology over the past nine years. As we move from the research and development phase to production, we are putting one of our most senior and talented executives in charge of this strategic initiative to ensure the successful commercialization of this revolutionary new technology,” states Khaykin.

“Mike joined IR in 2008 as Executive Vice President and Chief Operations Officer and was the principal

January/February 2013 www.compoundsemiconductor.net 195

Page 1 | Page 2 | Page 3 | Page 4 | Page 5 | Page 6 | Page 7 | Page 8 | Page 9 | Page 10 | Page 11 | Page 12 | Page 13 | Page 14 | Page 15 | Page 16 | Page 17 | Page 18 | Page 19 | Page 20 | Page 21 | Page 22 | Page 23 | Page 24 | Page 25 | Page 26 | Page 27 | Page 28 | Page 29 | Page 30 | Page 31 | Page 32 | Page 33 | Page 34 | Page 35 | Page 36 | Page 37 | Page 38 | Page 39 | Page 40 | Page 41 | Page 42 | Page 43 | Page 44 | Page 45 | Page 46 | Page 47 | Page 48 | Page 49 | Page 50 | Page 51 | Page 52 | Page 53 | Page 54 | Page 55 | Page 56 | Page 57 | Page 58 | Page 59 | Page 60 | Page 61 | Page 62 | Page 63 | Page 64 | Page 65 | Page 66 | Page 67 | Page 68 | Page 69 | Page 70 | Page 71 | Page 72 | Page 73 | Page 74 | Page 75 | Page 76 | Page 77 | Page 78 | Page 79 | Page 80 | Page 81 | Page 82 | Page 83 | Page 84 | Page 85 | Page 86 | Page 87 | Page 88 | Page 89 | Page 90 | Page 91 | Page 92 | Page 93 | Page 94 | Page 95 | Page 96 | Page 97 | Page 98 | Page 99 | Page 100 | Page 101 | Page 102 | Page 103 | Page 104 | Page 105 | Page 106 | Page 107 | Page 108 | Page 109 | Page 110 | Page 111 | Page 112 | Page 113 | Page 114 | Page 115 | Page 116 | Page 117 | Page 118 | Page 119 | Page 120 | Page 121 | Page 122 | Page 123 | Page 124 | Page 125 | Page 126 | Page 127 | Page 128 | Page 129 | Page 130 | Page 131 | Page 132 | Page 133 | Page 134 | Page 135 | Page 136 | Page 137 | Page 138 | Page 139 | Page 140 | Page 141 | Page 142 | Page 143 | Page 144 | Page 145 | Page 146 | Page 147 | Page 148 | Page 149 | Page 150 | Page 151 | Page 152 | Page 153 | Page 154 | Page 155 | Page 156 | Page 157 | Page 158 | Page 159 | Page 160 | Page 161 | Page 162 | Page 163 | Page 164 | Page 165 | Page 166 | Page 167 | Page 168 | Page 169 | Page 170 | Page 171 | Page 172 | Page 173 | Page 174 | Page 175 | Page 176 | Page 177 | Page 178 | Page 179 | Page 180 | Page 181 | Page 182 | Page 183 | Page 184 | Page 185 | Page 186 | Page 187 | Page 188 | Page 189 | Page 190 | Page 191 | Page 192 | Page 193 | Page 194 | Page 195 | Page 196 | Page 197 | Page 198 | Page 199 | Page 200 | Page 201 | Page 202 | Page 203 | Page 204 | Page 205 | Page 206 | Page 207 | Page 208 | Page 209 | Page 210 | Page 211 | Page 212 | Page 213 | Page 214 | Page 215 | Page 216 | Page 217 | Page 218 | Page 219 | Page 220 | Page 221 | Page 222 | Page 223 | Page 224 | Page 225 | Page 226 | Page 227 | Page 228 | Page 229 | Page 230 | Page 231 | Page 232 | Page 233