Telecoms ♦ news digest
700-1000 MHz GaAs pHEMT low-noise amplifier: 0.5dB noise figure; 38.8dB OIP3; 21dBm P1dB RF output power; single positive supply (4.35V at 57mA).
TQP3M9040 Oder.
FBH is one of the leading institutes in developing III-V semiconductors, while IHP is specialised in silicon-based systems and circuits. Both Leibniz institutes joined forces within the HiTeK project to combine the advantages of silicon-based CMOS (Complementary Metal Oxide Semiconductor) circuits from the IHP with those of InP circuits from the FBH.
1500-2300 GHz GaAs pHEMT low-noise amplifier: 0.62dB noise figure; 39.8dB OIP3, 21dBm P1dB RF output power; single positive supply (4.4V at 57mA).
Both devices come in a dual-amplifier structure which enables balanced operation. They provide adjustable bias (drain current and voltage) and integrated bias shut-down capability for FDD and TDD operation. Both come in a 4 x 4mm QFN package.
The TQP3M9039 and TQP3M9040 are in full production and samples are available.
InP-Si sandwich chips combine the best of both worlds
The integration of an indium phosphide chip with a silicon chip could be the key to faster and more powerful terahertz devices for high resolution and mobile applications
Two Leibniz institutes have broken new technological ground; they have successfully combined their up to now, separate technologies.
Due to their high performance, the novel chips developed within the HiTeK project promise to open the door to new applications.
Wolfgang Heinrich and Bernd Tillack are convinced of holding the key to faster and more powerful terahertz (THz) chips. The two scientists and their teams come from the Berlin-based Ferdinand- Braun-Institut (FBH) and from the IHP-Leibniz- Institut für innovative Mikroelektronik in Frankfurt/
The partners have taken an important step within the project by successfully integrating both circuits onto a semiconductor wafer, with experimental results demonstrating their high performance.
With the integration on one chip, new ambitious applications in the THz range are within reach. These include high-resolution imaging systems for medical and security technology as well as ultra- broadband mobile communication applications.
InP / Silicon sandwich wafer
For such applications, high output powers along with faster computer processors are needed, offering enhanced computer operation per second. In order to achieve this, circuits on the chips need to become smaller to boost miniaturisation in the semiconductor industry.
If the frequency range around 100 gigahertz (GHz) and beyond is to be covered, however, the breakdown voltage in the CMOS switching circuits decreases significantly. As a consequence, the available output power of the chips declines. This implies that the capability of generating sufficiently strong signals to establish a radio link and to detect material defects becomes insufficient.
To find a solution to this problem, IHP conducted research on bipolar CMOS based on SiGe, enhancing the breakdown voltages at high speed
January/February 2013
www.compoundsemiconductor.net 129
Page 1 |
Page 2 |
Page 3 |
Page 4 |
Page 5 |
Page 6 |
Page 7 |
Page 8 |
Page 9 |
Page 10 |
Page 11 |
Page 12 |
Page 13 |
Page 14 |
Page 15 |
Page 16 |
Page 17 |
Page 18 |
Page 19 |
Page 20 |
Page 21 |
Page 22 |
Page 23 |
Page 24 |
Page 25 |
Page 26 |
Page 27 |
Page 28 |
Page 29 |
Page 30 |
Page 31 |
Page 32 |
Page 33 |
Page 34 |
Page 35 |
Page 36 |
Page 37 |
Page 38 |
Page 39 |
Page 40 |
Page 41 |
Page 42 |
Page 43 |
Page 44 |
Page 45 |
Page 46 |
Page 47 |
Page 48 |
Page 49 |
Page 50 |
Page 51 |
Page 52 |
Page 53 |
Page 54 |
Page 55 |
Page 56 |
Page 57 |
Page 58 |
Page 59 |
Page 60 |
Page 61 |
Page 62 |
Page 63 |
Page 64 |
Page 65 |
Page 66 |
Page 67 |
Page 68 |
Page 69 |
Page 70 |
Page 71 |
Page 72 |
Page 73 |
Page 74 |
Page 75 |
Page 76 |
Page 77 |
Page 78 |
Page 79 |
Page 80 |
Page 81 |
Page 82 |
Page 83 |
Page 84 |
Page 85 |
Page 86 |
Page 87 |
Page 88 |
Page 89 |
Page 90 |
Page 91 |
Page 92 |
Page 93 |
Page 94 |
Page 95 |
Page 96 |
Page 97 |
Page 98 |
Page 99 |
Page 100 |
Page 101 |
Page 102 |
Page 103 |
Page 104 |
Page 105 |
Page 106 |
Page 107 |
Page 108 |
Page 109 |
Page 110 |
Page 111 |
Page 112 |
Page 113 |
Page 114 |
Page 115 |
Page 116 |
Page 117 |
Page 118 |
Page 119 |
Page 120 |
Page 121 |
Page 122 |
Page 123 |
Page 124 |
Page 125 |
Page 126 |
Page 127 |
Page 128 |
Page 129 |
Page 130 |
Page 131 |
Page 132 |
Page 133 |
Page 134 |
Page 135 |
Page 136 |
Page 137 |
Page 138 |
Page 139 |
Page 140 |
Page 141 |
Page 142 |
Page 143 |
Page 144 |
Page 145 |
Page 146 |
Page 147 |
Page 148 |
Page 149 |
Page 150 |
Page 151 |
Page 152 |
Page 153 |
Page 154 |
Page 155 |
Page 156 |
Page 157 |
Page 158 |
Page 159 |
Page 160 |
Page 161 |
Page 162 |
Page 163 |
Page 164 |
Page 165 |
Page 166 |
Page 167 |
Page 168 |
Page 169 |
Page 170 |
Page 171 |
Page 172 |
Page 173 |
Page 174 |
Page 175 |
Page 176 |
Page 177 |
Page 178 |
Page 179 |
Page 180 |
Page 181 |
Page 182 |
Page 183 |
Page 184 |
Page 185 |
Page 186 |
Page 187 |
Page 188 |
Page 189 |
Page 190 |
Page 191 |
Page 192 |
Page 193 |
Page 194 |
Page 195 |
Page 196 |
Page 197 |
Page 198 |
Page 199 |
Page 200 |
Page 201 |
Page 202 |
Page 203 |
Page 204 |
Page 205 |
Page 206 |
Page 207 |
Page 208 |
Page 209 |
Page 210 |
Page 211 |
Page 212 |
Page 213 |
Page 214 |
Page 215 |
Page 216 |
Page 217 |
Page 218 |
Page 219 |
Page 220 |
Page 221 |
Page 222 |
Page 223 |
Page 224 |
Page 225 |
Page 226 |
Page 227 |
Page 228 |
Page 229 |
Page 230 |
Page 231 |
Page 232 |
Page 233