news review
Trinity to guide ARC’S sapphire furnaces into a new era
AFTER qualifying sapphire substrates at many LED chip companies, Jiangsu Trinity Material Co., Ltd. continues to further improve the efficiency of ARC Energy’s CHES furnaces.
ARC Energy is currently working on the upgrades to lower costs and increase equipment productivity.
“After our success in qualifying material at LED chipmakers, we are seeking further improvements in our efficiency,” says Jamin Sheng, chief executive officer for Trinity Material. “Our partnership with ARC Energy will result in lower costs and increased equipment productivity.”
CHES furnaces allow seamless upgrades without investment in entirely new furnaces. ARC Energy is currently working to further improve sapphire production costs by lowering consumable costs, reducing power consumption, and increasing equipment productivity. The company’s CHES upgrades are targeted to further reduce costs in mid-2013. Trinity Material is poised to take advantage of these upgrades as they become available.
“In this challenging LED market, it is important for us to keep innovating, including supplying the latest technology
BluGlass demonstrates low-temperature
p-GaN BLUGLASS has successfully grown p-type GaN, an essential material that make up the top layers of a nitride LED using its low temperature RPCVD process.
upgrades to our partners such as Trinity Materials,” adds Rick Schwerdtfeger, co- founder and chief technology officer for ARC Energy. “We look forward to offering additional productivity and cost of ownership enhancements to CHES products in 2013.”
Trinity Material Co., Ltd. specialises in research, production and sales of LED grade sapphire substrate material. It has two 100% owned factories: Jiangxi Trinity Material Co., Ltd. and Jiangsu Trinity Material Co., Ltd. Trinity Material produces 2 inch to 8 inch sapphire ingots for LED chip manufacturing. Headquartered in Nashua, N.H., the Advanced Renewable Energy Company, LLC (ARC Energy), was founded in 2007 to commercialise cutting- edge technologies for LED and other clean energy markets.
GaN power pioneer Eric Lidow passes away
INTERNATIONAL RECTIFIER has announced that Eric Lidow passed away on January 18th, 2013. Lidow co-founded International Rectifier (IR) in 1947 and served as chairman of the company’s board of directors until his retirement in May 2008.
Over more than six decades, Lidow transformed IR from a start-up company that developed selenium photoelectric cells and selenium rectifiers into a major firm in power management technology. He was an innovator in GaN power device research. IR now produces thousands of analogue, digital, and mixed signal integrated circuits and other advanced
power management technologies and products. Eric Lidow served as the Company’s Chairman and CEO Officer until 1995, after which time he assumed the position of Executive Chairman.
“Eric was a highly respected pioneer in the power semiconductor industry,” says President and Chief Executive Officer, Oleg Khaykin. “The development and growth of International Rectifier was a great source of pride to him and as we continue to grow as a company, the legacy of his leadership during his 60 years at IR will remain. Everyone at International Rectifier wishes to send their heartfelt condolences to Eric’s family at this time of great sorrow.”
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www.compoundsemiconductor.net January / February 2013
Preliminary testing has been carried out on the sample using a 0.5mm diameter size p-type indium contact. The light output was measured with a UV-detector positioned under the wafer calibrated at the wavelength of the light emission. At 20 mA and 4.7 V, the light output was 270 µW (light emission at 458 nm with a full width half maximum of 19 nm).
At 50 mA and 5.5 V, the light output was 1.23 mW (light emission at 456 nm with a full width half maximum of 18nm) - the current was applied continuously for over an hour without the loss of function of the device.
Demonstration of light emission from an RPCVD p-GaN layer grown on a MOCVD grown multi-quantum well structure.
Recently, at the company’s AGM, BluGlass outlined that it was looking to demonstrate p-GaN and identified a number of steps in order to demonstrate improved LED efficiency with a low temperature process. BluGlass CEO, Giles Bourne commented, “While these results are preliminary, they represent highly encouraging progress, ahead of our expectations towards our next major milestone to prove that a low temperature technology can improve the efficiency of an LED.”
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