Agenda Day 2 5th
All speakers and March 2013
Chaired by Dr Andrew Nelson, IQE President and Chief Executive Officer
Joined BT Research Laboratories in 1981, leading the group responsible for the development of MOCVD technology for the manufacture of opto-electronic devices for optical fibre communications. He subsequently managed the technology transfer from BT to Agilent. Together with Mike Scott, he founded EPI in 1988, becoming Managing Director in 1991 and Chairman and Chief Executive Officer in 1996. Dr Nelson was appointed Chairman and CEO of IQE Plc in April 1999 and became CEO in February 2002 when he split his role and Dr Godfrey Ainsworth was appointed to the role of Chairman.
presentations are subject to change
Keynote speaker Dr Yifeng Wu, Vice President, Product Development, Transphorm
Status of High-Voltage GaN Power Electronics With the completion of JEDEC qualification of the first 600V GaN devices in 2012, progress in GaN Electronics has moved from dream to reality. These GaN transistors and Schottky diodes started sampling in 2011 and lower-cost versions of GaN-on-Si devices became available for sampling in February 2012. This presentation focuses on the performance of these exciting new devices in Power Electronics applications. Topics include brief fundamentals of GaN, real-world advantages over competing technologies, device specifications and package schemes, and then expand to switching characteristics, tolerance to transients and reliability, which demonstrate product maturity necessary to gain industry acceptance.
Daniel Cline, Senior Analyst, Lux Research WBG Devices Electricity Grid Opportunity With significant investment and rapid improvements in performance of high-power-grid-tied inverters and converters, manufacturers are being forced to examine their choice of power electronics transistors and circuit topologies to continue raising the bar. As incremental improvements in performance for conventional silicon-based inverters are decelerating, materials-based device innovations like silicon carbide and gallium nitride stand to keep pace with these demands - notably, increasing reliability and reducing cost. This talk will provide an insight in to how the new material-power electronics is likely to influence the solar PV industry, highlighting the cost, performance and reliability improvements that can result by switching to these new materials. It will analyze the potential effects of such adoption on the balance of systems, clearly differentiating system level advantages compared to present systems. Further, it will examine how development and progress in the solar sector can be applied to the broader on-grid application of these emerging power electronic devices.
Dr Philippe Roussel, Business Unit Manager, Yole Developpement GaN vs SiC in Power Electronics-Status & Roadmap to 2020
GaN is now envisioned as the competing technology that can disrupt the expected natural and organic growth of the SiC business. Originally we thought GaN devices could have created turbulence in the SiC area starting in 2011 by proposing 600V devices with a tip-point at 1.2kV. However it seems that the GaN technology achievements have been delayed compared to the previous roadmap and only 200V GaN devices are available in volume as of now. Thus, at the moment, the 600V blurry region where SiC and GaN are supposed to fight is safe for SiC as no devices can compete yet.
Dr Frank Schulte, Vice President, Aixtron Europe MOCVD - Enabler for Mobility & Energy Efficiency
Many industrial applications are looking forward to increase mobility and mostly at the same time increasing energy efficiency and saving and/or generating energy. That is true like for communication devices, automotives, solar cells or energy transport. MOCVD for Compound Semiconductor Material is being in a lot of these applications one of the key technology which must provide high sophisticated/high complex layer structures with high quality produced at low cost of ownership. In this paper the deposition technology will be reviewed under the aspect of fulfilling the complex requirements of providing the necessary equipment. Key parameters like wafer sizes, yield, and reproducibility will be considered and further cost saving resulting from growing on Silicon substrate and use well established Silicon semiconductor process and platforms will be discussed.
Ms Ann Hughes, Business Manager for Gases and Metalorganics, SAFC Innovation to Maximise Production Uptime With materials for Compound Semiconductors and Metalorganics in the maturity phase, the industry is moving towards developing efficiencies, optimisations, and related value chain innovations. As such, improving delivery systems, optimising processes, improving efficiency, and perfecting quality and uniformity have become the new value differentiators. This presentation will expose some of the novel ways in which SAFC Hitech is working to reduce total cost of ownership in areas like bulk delivery systems and improved bubblers.
Bryan Bothwell, Strategy and Business Development Manager, TriQuint Semiconductor Maximizing Gallium Nitride Product Solutions & Foundry Services for Advanced RF Design Success Gallium Nitride (GaN) is the key enabling technology for RF markets due to its higher power, efficiency and temperature operation combined with wider bandwidth than Gallium Arsenide (GaAs). As a world pioneer in GaN, TriQuint has developed this technology for markets across commercial and defense applications. GaN is ideally suited for radar, communications, test equipment, electronic warfare and similar broadband systems. TriQuint’s business model combines research and development leadership with product and foundry channels to not only enable RF solutions at the price points customers need today, but provides the advanced technology required for future RF and adjacent market growth.
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